Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

2019 ◽  
Vol 7 (19) ◽  
pp. 5821-5829 ◽  
Author(s):  
Joo-Young Kim ◽  
Eun Kyung Lee ◽  
Jiyoung Jung ◽  
Don-Wook Lee ◽  
Youngjun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Urethane Acrylate ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Inorganic Hybrid

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).

Photo-Patternable Titanium Doped Organic–Inorganic Hybrid Gate Dielectric in Organic Thin Film Transistors

2008 ◽  
Vol 8 (9) ◽  
pp. 4679-4683 ◽  
Author(s):  
Chaun Gi Choi ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Uv Light ◽  
Sol Gel ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid ◽  
Top Contact

Solution processable and photo-patternable titanium doped organic–inorganic hybrid material (MDT hybrimer) was prepared by simple sol–gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V−1s−1, −14 V, 1.6 Vdec.−1, and 3 × 106, respectively.

Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

2017 ◽  
Vol 9 (13) ◽  
pp. 11721-11731 ◽  
Author(s):  
Soo Jin Kim ◽  
Mi Jang ◽  
Hee Yeon Yang ◽  
Jinhan Cho ◽  
Ho Sun Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Organic Thin Film ◽  
Pulsed Light

Thermoset polymers consisting of novolac and melamine derivatives as insulators for organic thin-film transistors

2015 ◽  
Vol 3 (15) ◽  
pp. 3623-3628 ◽  
Author(s):  
Jong-Woon Ha ◽  
Jae-Ho Jang ◽  
Yongnam Kim ◽  
Jin-Kyun Lee ◽  
Jeonghun Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Catalytic Amount ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Organic Thin Film ◽  
Gate Dielectric Material

A potential gate dielectric material that can be cured and processed at low temperatures was designed and synthesized via the cross-linking of bisphenol A novolac (Novolac) and hexamethoxymethylmelamine (HMMM) in the presence of a catalytic amount of p-toluenesulfonic acid.

UV-directly patternable organic–inorganic hybrid composite dielectrics for organic thin-film transistors

2012 ◽  
Vol 13 (12) ◽  
pp. 3302-3309 ◽  
Author(s):  
Chunyu Zhang ◽  
He Wang ◽  
Zuosen Shi ◽  
Zhanchen Cui ◽  
Donghang Yan
Keyword(s):  
Thin Film ◽  
Hybrid Composite ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid
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