scholarly journals Phase field modeling of excimer laser crystallization of thin silicon films on amorphous substrates

2006 ◽  
Vol 100 (5) ◽  
pp. 053504 ◽  
Author(s):  
C. J. Shih ◽  
C. H. Fang ◽  
C. C. Lu ◽  
M. H. Wang ◽  
M. H. Lee ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Phase Field ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Phase Field Modeling ◽  
Field Modeling ◽  
Amorphous Substrates ◽  
Excimer Laser Crystallization ◽  
Thin Silicon

Single shot excimer laser crystallization of silicon films deposited by LPCVD

1997 ◽  
Vol 296 (1-2) ◽  
pp. 53-56 ◽  
Author(s):  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Silicon Films ◽  
Single Shot ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization

The Effect of Film Thickness and Pulse Duration Variation in Excimer Laser Crystallization of Thin Si Films

1996 ◽  
Vol 452 ◽  
Author(s):  
J. P. Leonard ◽  
M. A. Bessette ◽  
V. V. Gupta ◽  
James S. Im
Keyword(s):  
Energy Density ◽  
Film Thickness ◽  
Partial Melting ◽  
Pulse Duration ◽  
Excimer Laser ◽  
Silicon Film ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Crystal Silicon ◽  
Excimer Laser Crystallization

AbstractRecognizing that the processing window in conventional excimer laser crystallization corresponds mainly to the partial melting regime, and that this can be properly simulated using a one-dimensional model, we investigate numerically the melting and solidification of thin silicon films on SiO2. Here a portion of the silicon film is melted and subsequent vertical solidification is initiated from the lower interface bounding the unmelted region. Upper and lower energy density limits for this regime are calculated for crystal silicon films of thickness 10 to 300 nm, and for pulse duration ranging from 10 to 200 ns. These calculations show that increasing pulse duration requires proportionally more incident energy density to partially melt the film, while decreasing film thickness reduces the range of energy densities over which partial melting can occur. The results are explained in terms of characteristic thermal diffusion distances and the enthalpy change associated with melting. In view of the results we discuss optimization of the conventional excimer laser crystallization and the avoidance of complete melting during the process.

Excimer Laser Crystallization of Amorphous Silicon Films for Poly-Si TFT Fabrication

1993 ◽  
Vol 321 ◽  
Author(s):  
Hiroshi Tanabe ◽  
Kenji Sera ◽  
Ken-Ichi Nakamura ◽  
Kazumi Hirata ◽  
Katsuhisa Yuda ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Electron Mobility ◽  
Carrier Transport ◽  
Silicon Films ◽  
Laser Crystallization ◽  
Transmission Electron ◽  
Transport Analysis ◽  
Excimer Laser Crystallization ◽  
Polycrystalline Silicon Films

ABSTRACTExcimer laser crystallized silicon films have been studied as a function of the number of laser shots, and the influence of the use of such polycrystalline films in thin film transistors (TFTs) has also been investigated. It is found that electron Mobility, one of the most important of all TFT characteristics, increases monotonically with the number of irradiations, with maximum mobility being obtained at about 20 shots. This result is not due to grain size, since transmission electron microscopy indicates that the number of laser shots does not affect grain size in polycrystalline silicon films. Raman studies and TFT carrier transport analysis, on the other hand, suggest that this increase in electron mobility may be explained by the decrease in grain boundary defects and defects inside grains.

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