Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

2006 ◽  
Vol 89 (2) ◽  
pp. 022502 ◽  
Author(s):  
J. Okabayashi ◽  
K. Kanai ◽  
K. Kubo ◽  
S. Toyoda ◽  
M. Oshima ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

scholarly journals Discovery of Two Families of Vsb-Based Compounds with V-Kagome Lattice

2021 ◽  
Vol 38 (12) ◽  
pp. 127102
Author(s):  
Yuxin Yang ◽  
Wenhui Fan ◽  
Qinghua Zhang ◽  
Zhaoxu Chen ◽  
Xu Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Theoretical Calculations ◽  
Photoemission Spectroscopy ◽  
Two Dimensional ◽  
Kagome Lattice ◽  
Space Group ◽  
Kagomé Lattice ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Nonmagnetic Metals

We report the structure and physical properties of two newly discovered compounds AV8Sb12 and AV6Sb6 (A = Cs, Rb), which have C 2 (space group: Cmmm) and C 3 (space group: R 3 ¯ m ) symmetry, respectively. The basic V-kagome unit appears in both compounds, but stacking differently. A V2Sb2 layer is sandwiched between two V3Sb5 layers in AV8Sb12, altering the V-kagome lattice and lowering the symmetry of kagome layer from hexagonal to orthorhombic. In AV6Sb6, the building block is a more complex slab made up of two half-V3Sb5 layers that are intercalated by Cs cations along the c-axis. Transport property measurements demonstrate that both compounds are nonmagnetic metals, with carrier concentrations at around 1021 cm−3. No superconductivity has been observed in CsV8Sb12 above 0.3 K under in situ pressure up to 46 GPa. Compared to CsV3Sb5, theoretical calculations and angle-resolved photoemission spectroscopy reveal a quasi-two-dimensional electronic structure in CsV8Sb12 with C 2 symmetry and no van Hove singularities near the Fermi level. Our findings will stimulate more research into V-based kagome quantum materials.

In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy

2017 ◽  
Vol 34 (7) ◽  
pp. 077402 ◽  
Author(s):  
Pai Xiang ◽  
Ji-Shan Liu ◽  
Ming-Ying Li ◽  
Hai-Feng Yang ◽  
Zheng-Tai Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Structure Study ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy

Interfacial electronic structure of SrTiO3∕SrRuO3 heterojuctions studied by in situ photoemission spectroscopy

2008 ◽  
Vol 92 (12) ◽  
pp. 122105 ◽  
Author(s):  
H. Kumigashira ◽  
M. Minohara ◽  
M. Takizawa ◽  
A. Fujimori ◽  
D. Toyota ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy ◽  
Interfacial Electronic Structure

scholarly journals Electronic structure and signature of Tomonaga–Luttinger liquid state in epitaxial CoSb1−x nanoribbons

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Rui Lou ◽  
Minyinan Lei ◽  
Wenjun Ding ◽  
Wentao Yang ◽  
Xiaoyang Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Luttinger Liquid ◽  
Spectral Weight ◽  
Photoemission Spectroscopy ◽  
Strong Correlations ◽  
Fermi Surfaces ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Temperature Scaling ◽  
Interfacial Charge

AbstractRecently, monolayer CoSb/SrTiO3 has been proposed as a candidate harboring interfacial superconductivity in analogy with monolayer FeSe/SrTiO3. Experimentally, while the CoSb-based compounds manifesting as nanowires and thin films have been realized on SrTiO3 substrates, serving as a rich playground, their electronic structures are still unknown and yet to be resolved. Here, we have fabricated CoSb1−x nanoribbons with quasi-one-dimensional stripes on SrTiO3(001) substrates using molecular beam epitaxy and investigated the electronic structure by in situ angle-resolved photoemission spectroscopy. Straight Fermi surfaces without lateral dispersions are observed. CoSb1−x/SrTiO3 is slightly hole doped, where the interfacial charge transfer is opposite to that in monolayer FeSe/SrTiO3. The spectral weight near the Fermi level exhibits power-law-like suppression and obeys a universal temperature scaling, serving as the signature of Tomonaga–Luttinger liquid (TLL) state. The obtained TLL parameter of ~0.21 shows the underlying strong correlations. Our results not only suggest CoSb1−x nanoribbon as a representative TLL system but also provide clues for further investigations on the CoSb-related interface.

Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy

2017 ◽  
Vol 191 ◽  
pp. 97-100 ◽  
Author(s):  
Abduleziz Ablat ◽  
Mamatrishat Mamat ◽  
Yasin Ghupur ◽  
Aimierding Aimidula ◽  
Rong Wu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy
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