Rapidly Thermal Annealed Si-Doped In2O3 Films for Organic Photovoltaics

We report the electrical, optical, and structural properties of Si-doped In2O3 (ISO) films prepared using co-sputtering system with multi cathode guns for use in organic photovoltaics (OPVs). We investigated the effect of Si doping power on the electrical, optical, and structural properties of ISO film that was rapidly thermally annealed at a temperature of 400 °C. Due to the high Lewis acid strength (8.096) of the Si dopant, the ISO films showed high mobility and low resistivity despite the low Si doping concentration. Low resistivity of the annealed ISO films indicated that Si4+ acts as an effective dopant of an In2O3 matrix by substitution with the In3+ site. At a Si doping power of 50 W, ISO film showed a sheet resistance of 19.7 Ohm/square and optical transparency of 76.7%, which are acceptable values for fabrication of OPVs. Successful operation of OPV cells fabricated on transparent ISO film indicates that ISO is a promising high mobility transparent electrode material and alternative to conventional ITO films.