Temperature-dependence of the electronic structure of La1−x Srx MnO3 thin films studied by in situ photoemission spectroscopy

2007 ◽  
Vol 156-158 ◽  
pp. 375-378 ◽  
Author(s):  
K. Horiba ◽  
A. Chikamatsu ◽  
H. Kumigashira ◽  
M. Oshima ◽  
H. Wadati ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Temperature Dependence ◽  
Photoemission Spectroscopy

In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy

2017 ◽  
Vol 34 (7) ◽  
pp. 077402 ◽  
Author(s):  
Pai Xiang ◽  
Ji-Shan Liu ◽  
Ming-Ying Li ◽  
Hai-Feng Yang ◽  
Zheng-Tai Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Structure Study ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

In situ XPS analysis of the electronic structure of silicon and titanium thin films exposed to low-pressure inductively-coupled RF plasma

2021 ◽  
Vol 542 ◽  
pp. 148684
Author(s):  
Jordi Fraxedas ◽  
Max Schütte ◽  
Guillaume Sauthier ◽  
Massimo Tallarida ◽  
Salvador Ferrer ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Low Pressure ◽  
Rf Plasma ◽  
Xps Analysis ◽  
Inductively Coupled ◽  
In Situ Xps ◽  
Titanium Thin Films

Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

2006 ◽  
Vol 89 (2) ◽  
pp. 022502 ◽  
Author(s):  
J. Okabayashi ◽  
K. Kanai ◽  
K. Kubo ◽  
S. Toyoda ◽  
M. Oshima ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy
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