Crossover between Mott and Efros-Shklovskii variable-range hopping in Sr2IrO4 epitaxial thin films by misfit strain and isovalent doping

2019 ◽  
Vol 126 (18) ◽  
pp. 185101 ◽  
Author(s):  
M. Souri ◽  
J. G. Connell ◽  
J. Nichols ◽  
J. Terzic ◽  
G. Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Strain ◽  
Epitaxial Thin Films ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Isovalent Doping

Mott variable range hopping transport in thermal evaporated vanadyl 2, 3 naphthalocyanine thin films

2021 ◽  
pp. 125029
Author(s):  
I. Dhanya ◽  
Malathy Krishnan ◽  
Reny Renji ◽  
M.K. Anu ◽  
Rachel G. Varghese ◽  
...  
Keyword(s):  
Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range

Domain evolution of tetragonal Pb(ZrxTi1−x) O3 piezoelectric thin films on SrTiO3 (100) surfaces: combined effects of misfit strain and Zr/Ti ratio

2014 ◽  
Vol 2 (29) ◽  
pp. 5836-5841 ◽  
Author(s):  
Qi Yu ◽  
Jing-Feng Li ◽  
Fang-Yuan Zhu ◽  
Jiangyu Li
Keyword(s):  
Thin Films ◽  
Misfit Strain ◽  
Epitaxial Thin Films ◽  
Combined Effects ◽  
Piezoelectric Thin Films ◽  
Domain Evolution ◽  
Ferroelectric Domains ◽  
Substrate Constraint

The ferroelectric domains of tetragonal Pb(ZrxTi1−x)O3 epitaxial thin films have been studied comprehensively to reveal their piezoelectric responses under substrate constraint.

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2018 ◽  
Vol 775 ◽  
pp. 238-245 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Localized States ◽  
Positive Sign ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Deposited Films

In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

Variable range hopping conduction in ZnO nanocrystal thin films

2018 ◽  
Vol 29 (41) ◽  
pp. 415202 ◽  
Author(s):  
Brian T Benton ◽  
Benjamin L Greenberg ◽  
Eray Aydil ◽  
Uwe R Kortshagen ◽  
S A Campbell
Keyword(s):  
Thin Films ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Variable Range Hopping Conduction ◽  
Zno Nanocrystal

Relationship between variable range hopping transport and carrier density of amorphous In2O3–10 wt. % ZnO thin films

2012 ◽  
Vol 112 (3) ◽  
pp. 033716 ◽  
Author(s):  
Kazumasa Makise ◽  
Bunju Shinozaki ◽  
Takayuki Asano ◽  
Kazutaka Mitsuishi ◽  
Koki Yano ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Zno Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range
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