Mechanism of poly(methyl methacrylate) film formation by pulsed laser deposition

2006 ◽  
Vol 100 (1) ◽  
pp. 014906 ◽  
Author(s):  
Erik Süske ◽  
Thorsten Scharf ◽  
Hans-Ulrich Krebs ◽  
Thomas Junkers ◽  
Michael Buback
Nano LIFE ◽  
2010 ◽  
Vol 01 (01n02) ◽  
pp. 145-152
Author(s):  
MISHAE KHAN ◽  
SHAUN D. GITTARD ◽  
ROGER J. NARAYAN ◽  
DANIEL M BUBB

Silver-poly(methyl methacrylate) nanocomposite thin films were deposited on silicon substrates by means of matrix-assisted pulsed laser deposition. Atomic force microscopy revealed that the surface morphologies of the silver-poly(methyl methacrylate) nanocomposite thin films were dependent on the matrix-assisted pulsed laser evaporation processing parameters. Films produced using 4% (by weight of solvent) silver nanoparticles exhibited the highest antimicrobial activity. Antimicrobial activity of the thin films was dependent on the silver concentration, the microenvironment created by the polymer–silver interaction, and the surface potential.


2007 ◽  
Vol 254 (4) ◽  
pp. 1312-1315 ◽  
Author(s):  
Britta Lösekrug ◽  
Andreas Meschede ◽  
Hans-Ulrich Krebs

2003 ◽  
Vol 208-209 ◽  
pp. 645-650 ◽  
Author(s):  
R. Cristescu ◽  
G. Socol ◽  
I.N. Mihailescu ◽  
M. Popescu ◽  
F. Sava ◽  
...  

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.


1998 ◽  
Vol 33 (5) ◽  
pp. 711-716 ◽  
Author(s):  
J Vaitkus ◽  
V Kazlauskiene ◽  
J Miskinis ◽  
J Sinius

1994 ◽  
Vol 64 (24) ◽  
pp. 3237-3239 ◽  
Author(s):  
M. Yudasaka ◽  
Y. Tasaka ◽  
M. Tanaka ◽  
H. Kamo ◽  
Y. Ohki ◽  
...  

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