Pulsed laser deposition of smooth poly(methyl methacrylate) films at 248nm

2007 ◽  
Vol 254 (4) ◽  
pp. 1312-1315 ◽  
Author(s):  
Britta Lösekrug ◽  
Andreas Meschede ◽  
Hans-Ulrich Krebs
Nano LIFE ◽  
2010 ◽  
Vol 01 (01n02) ◽  
pp. 145-152
Author(s):  
MISHAE KHAN ◽  
SHAUN D. GITTARD ◽  
ROGER J. NARAYAN ◽  
DANIEL M BUBB

Silver-poly(methyl methacrylate) nanocomposite thin films were deposited on silicon substrates by means of matrix-assisted pulsed laser deposition. Atomic force microscopy revealed that the surface morphologies of the silver-poly(methyl methacrylate) nanocomposite thin films were dependent on the matrix-assisted pulsed laser evaporation processing parameters. Films produced using 4% (by weight of solvent) silver nanoparticles exhibited the highest antimicrobial activity. Antimicrobial activity of the thin films was dependent on the silver concentration, the microenvironment created by the polymer–silver interaction, and the surface potential.


2006 ◽  
Vol 100 (1) ◽  
pp. 014906 ◽  
Author(s):  
Erik Süske ◽  
Thorsten Scharf ◽  
Hans-Ulrich Krebs ◽  
Thomas Junkers ◽  
Michael Buback

2003 ◽  
Vol 208-209 ◽  
pp. 645-650 ◽  
Author(s):  
R. Cristescu ◽  
G. Socol ◽  
I.N. Mihailescu ◽  
M. Popescu ◽  
F. Sava ◽  
...  

Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.


1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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