Polyperinaphthalene film formation by pulsed laser deposition with a target of perylenetetracarboxylic dianhydride

1994 ◽  
Vol 64 (24) ◽  
pp. 3237-3239 ◽  
Author(s):  
M. Yudasaka ◽  
Y. Tasaka ◽  
M. Tanaka ◽  
H. Kamo ◽  
Y. Ohki ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition

Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Temperature Range ◽  
Type Semiconductor ◽  
Annealing Procedure ◽  
Si Thin Film

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

PbS Thin Film Formation on Terrace-Step Surface by Pulsed Laser Deposition

1998 ◽  
Vol 33 (5) ◽  
pp. 711-716 ◽  
Author(s):  
J Vaitkus ◽  
V Kazlauskiene ◽  
J Miskinis ◽  
J Sinius
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Formation

Nanoparticles and Thin Film Formation in Ultrashort Pulsed Laser Deposition of Vanadium Oxide†

2009 ◽  
Vol 113 (52) ◽  
pp. 14969-14974 ◽  
Author(s):  
Roberto Teghil ◽  
Luciano D’Alessio ◽  
Angela De Bonis ◽  
Agostino Galasso ◽  
Neluta Ibris ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Formation ◽  
Ultrashort Pulsed Laser

Surface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED

2002 ◽  
Vol 749 ◽  
Author(s):  
A. Pun ◽  
S.M. Durbin ◽  
J. Kennedy ◽  
A. Markwitz ◽  
R. Reeves ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Elevated Temperatures ◽  
Film Formation ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Growth Surface ◽  
Surface Dynamics ◽  
Growth Mechanisms ◽  
Substrate Temperatures

ABSTRACTPost-growth surface dynamics of epitaxial GaAs (100) thin films grown by pulsed laser deposition (PLD) have been studied using dynamic reflection high-energy electron diffraction (RHEED) in an effort to better understand the growth mechanisms present in pulsed laser deposition. Results have indicated, as expected, that processes occurring at reduced substrate temperatures manifest themselves more slowly than at elevated temperatures. This has been shown through the analysis of static RHEED images and dynamic specular beam intensity as well as profile scans.

Mechanism of poly(methyl methacrylate) film formation by pulsed laser deposition

2006 ◽  
Vol 100 (1) ◽  
pp. 014906 ◽  
Author(s):  
Erik Süske ◽  
Thorsten Scharf ◽  
Hans-Ulrich Krebs ◽  
Thomas Junkers ◽  
Michael Buback
Keyword(s):  
Methyl Methacrylate ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Poly Methyl Methacrylate

Thin Film Formation of Perovskite Type Dielectric and Ferroelectric Materials(MTiO3,M=Ca,Sr,Ba and Pb) by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
Hitoshi Tabata ◽  
Hidekazu Tanaka ◽  
Tomoji Kawai
Keyword(s):  
Pulsed Laser Deposition ◽  
Single Crystals ◽  
Remanent Polarization ◽  
Film Formation ◽  
Pulsed Laser ◽  
Dielectric Materials ◽  
Ferroelectric Materials ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Perovskite Type

ABSTRACTWe have formed thin films of ferroelectric and dielectric materials (BaTiO3, SrTiO3 and CaTiO3) by pulsed laser deposition on various kinds of substrates such as SrTiO3, LaAlO3 and MgO(100) single crystals. All the films can be formed epitaxially on the SrTiO3 substrate with c-axis orientation by choosing suitable conditions. The electrical behavior of these films such as dielectric constant and spontaneous polarization is quite similar to that of single crystals in bulk samples. The remanent polarization of BaTiO3 and PbTiO3 films are about 15 μC/cm2 and 80 μC/cm2, respectively. The value of 80 μC/cm2 is almost the same as that theoretically predicted and have not been obtain in the bulk samples. The unique advantage of the pulsed laser deposition technique is its ability to produce highly oriented stoichiometric films that show good electrical properties.

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