60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski; P. Wiśniewski; M. Siekacz; P. Perlin; A. Feduniewicz-Zmuda; G. Nowak; I. Grzegory; M. Leszczyński; S. Porowski

doi:10.1063/1.2208929

60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.2208929 ◽

2006 ◽

Vol 88 (22) ◽

pp. 221108 ◽

Cited By ~ 44

Author(s):

C. Skierbiszewski ◽

P. Wiśniewski ◽

M. Siekacz ◽

P. Perlin ◽

A. Feduniewicz-Zmuda ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Continuous Wave ◽

Laser Diodes ◽

Continuous Wave Operation

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Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:20051430 ◽

2005 ◽

Vol 41 (13) ◽

pp. 739 ◽

Cited By ~ 23

Author(s):

M. Kauer ◽

S.E. Hooper ◽

V. Bousquet ◽

K. Johnson ◽

C. Zellweger ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Continuous Wave ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Continuous Wave Operation ◽

Multiple Quantum Well Laser

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Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19901068 ◽

1990 ◽

Vol 26 (20) ◽

pp. 1668 ◽

Cited By ~ 17

Author(s):

A. Kikuchi ◽

Y. Kaneko ◽

I. Nomura ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Visible Light ◽

Room Temperature ◽

Molecular Beam ◽

Continuous Wave ◽

Gas Source ◽

Continuous Wave Operation

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Molecular beam epitaxy grown PbEuSeTe buried‐heterostructure lasers with continuous wave operation at 195 K

Applied Physics Letters ◽

10.1063/1.103768 ◽

1990 ◽

Vol 57 (27) ◽

pp. 2891-2893 ◽

Cited By ~ 21

Author(s):

Z. Feit ◽

D. Kostyk ◽

R. J. Woods ◽

P. Mak

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Continuous Wave ◽

Continuous Wave Operation ◽

Buried Heterostructure

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Room-temperature continuous-wave operation of ZnSe-based blue-green laser diode grown by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00989-x ◽

1997 ◽

Vol 175-176 ◽

pp. 637-641 ◽

Cited By ~ 1

Author(s):

Moon-Deock Kim ◽

Bong-Jin Kim ◽

Min-Hyon Jeon ◽

Jeong-Keun Ji ◽

Sang-Dong Lee ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Laser Diode ◽

Room Temperature ◽

Molecular Beam ◽

Continuous Wave ◽

Green Laser ◽

Continuous Wave Operation

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Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.1789236 ◽

2004 ◽

Vol 85 (9) ◽

pp. 1469-1471 ◽

Cited By ~ 17

Author(s):

Z. Z. Sun ◽

S. F. Yoon ◽

K. C. Yew ◽

B. X. Bo ◽

Du An Yan ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Room Temperature ◽

Molecular Beam ◽

Continuous Wave ◽

Quantum Dot Laser ◽

Continuous Wave Operation ◽

Gaas Quantum Dot

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Molecular beam epitaxial growth and characterization of II–VI blue-green laser diodes having continuous-wave operation at room temperature

Materials Science and Engineering B ◽

10.1016/0921-5107(94)90014-0 ◽

1994 ◽

Vol 28 (1-3) ◽

pp. 51-54 ◽

Cited By ~ 1

Author(s):

M.D. Ringle ◽

D.C. Grillo ◽

Y. Fan ◽

L. He ◽

J. Han ◽

...

Keyword(s):

Epitaxial Growth ◽

Room Temperature ◽

Molecular Beam ◽

Continuous Wave ◽

Laser Diodes ◽

Green Laser ◽

Molecular Beam Epitaxial ◽

Continuous Wave Operation ◽

Molecular Beam Epitaxial Growth

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AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4865478 ◽

2014 ◽

Vol 32 (2) ◽

pp. 02C112

Author(s):

Czesław Skierbiszewski ◽

Henryk Turski ◽

Grzegorz Muziol ◽

Paweł Wolny ◽

Grzegorz Cywiński ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Continuous Wave ◽

Laser Diodes ◽

Nitride Laser

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Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.2985900 ◽

2008 ◽

Vol 93 (11) ◽

pp. 111109 ◽

Cited By ~ 38

Author(s):

S. G. Li ◽

Q. Gong ◽

Y. F. Lao ◽

K. He ◽

J. Li ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Room Temperature ◽

Molecular Beam ◽

Continuous Wave ◽

Quantum Dot Lasers ◽

Gas Source ◽

Continuous Wave Operation

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1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes

Electronics Letters ◽

10.1049/el:20030532 ◽

2003 ◽

Vol 39 (10) ◽

pp. 777 ◽

Cited By ~ 27

Author(s):

D. Gollub ◽

S. Moses ◽

M. Fischer ◽

A. Forchel

Keyword(s):

Continuous Wave ◽

Laser Diodes ◽

Continuous Wave Operation

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591440 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1623 ◽

Cited By ~ 4

Author(s):

T. C. Hasenberg ◽

P. S. Day ◽

E. M. Shaw ◽

D. J. Magarrell ◽

J. T. Olesberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Laser Diodes ◽

Infrared Laser ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Midwave Infrared ◽

Broken Gap

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