scholarly journals Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

2004 ◽  
Vol 85 (9) ◽  
pp. 1469-1471 ◽  
Author(s):  
Z. Z. Sun ◽  
S. F. Yoon ◽  
K. C. Yew ◽  
B. X. Bo ◽  
Du An Yan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Continuous Wave ◽  
Quantum Dot Laser ◽  
Continuous Wave Operation ◽  
Gaas Quantum Dot

Quantum-dot laser with a metal-coated waveguide under continuous-wave operation at room temperature

2009 ◽  
Vol 95 (23) ◽  
pp. 233507 ◽  
Author(s):  
Chien-Yao Lu ◽  
Shu-Wei Chang ◽  
Shang-Hua Yang ◽  
Shun Lien Chuang
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Dot Laser ◽  
Continuous Wave Operation

Room-temperature continuous-wave operation of ZnSe-based blue-green laser diode grown by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 637-641 ◽  
Author(s):  
Moon-Deock Kim ◽  
Bong-Jin Kim ◽  
Min-Hyon Jeon ◽  
Jeong-Keun Ji ◽  
Sang-Dong Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Diode ◽  
Room Temperature ◽  
Molecular Beam ◽  
Continuous Wave ◽  
Green Laser ◽  
Continuous Wave Operation

Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser

1999 ◽  
Vol 75 (21) ◽  
pp. 3267-3269 ◽  
Author(s):  
Gyoungwon Park ◽  
Oleg B. Shchekin ◽  
Sebastion Csutak ◽  
Diana L. Huffaker ◽  
Dennis G. Deppe
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Dot Laser ◽  
Continuous Wave Operation

Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Broad Area ◽  
Time Resolved ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

Studies of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy

2016 ◽  
Vol 48 (2) ◽  
Author(s):  
S. G. Li ◽  
Q. Gong ◽  
X. Z. Wang ◽  
C. F. Cao ◽  
Z. W. Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Gas Source ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

scholarly journals Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate

2009 ◽  
Vol 17 (9) ◽  
pp. 7036 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Masahiro Nomura ◽  
Denis Guimard ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Photonic Crystal ◽  
Quantum Dot ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Continuous Wave ◽  
Continuous Wave Operation ◽  
Gaas Quantum Dot
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