AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy
2014 ◽
Vol 32
(2)
◽
pp. 02C112
Keyword(s):
2008 ◽
Vol 5
(6)
◽
pp. 2204-2206
◽
2019 ◽
Vol 91
◽
pp. 387-391
◽
Keyword(s):
2015 ◽
Vol 425
◽
pp. 398-400
◽
Keyword(s):
2000 ◽
Vol 360
(1-2)
◽
pp. 195-204
◽
Keyword(s):