Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

1996 ◽  
Vol 68 (25) ◽  
pp. 3585-3587 ◽  
Author(s):  
H. Ishikuro ◽  
T. Fujii ◽  
T. Saraya ◽  
G. Hashiguchi ◽  
T. Hiramoto ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Coulomb Blockade ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Insulator Substrate

scholarly journals Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

2003 ◽  
Vol 93 (2) ◽  
pp. 1230-1240 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor
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