Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

2006 ◽  
Vol 88 (16) ◽  
pp. 163117 ◽  
Author(s):  
K. W. Sun ◽  
A. Kechiantz ◽  
B. C. Lee ◽  
C. P. Lee
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Carrier Capture ◽  
Ultrafast Carrier

scholarly journals Spin-preserving ultrafast carrier capture and relaxation in InGaAs quantum dots

2005 ◽  
Vol 87 (15) ◽  
pp. 153113 ◽  
Author(s):  
S. Trumm ◽  
M. Wesseli ◽  
H. J. Krenner ◽  
D. Schuh ◽  
M. Bichler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Capture ◽  
Ultrafast Carrier

Carrier capture and relaxation in InAs quantum dots

2005 ◽  
Vol 16 (9) ◽  
pp. 1530-1535 ◽  
Author(s):  
K W Sun ◽  
J W Chen ◽  
B C Lee ◽  
C P Lee ◽  
A M Kechiantz
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Carrier Capture

Ultrafast carrier capture at room temperature in InAs∕InP quantum dots emitting in the 1.55μm wavelength region

2005 ◽  
Vol 86 (17) ◽  
pp. 173109 ◽  
Author(s):  
E. W. Bogaart ◽  
R. Nötzel ◽  
Q. Gong ◽  
J. E. M. Haverkort ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Wavelength Region ◽  
Carrier Capture ◽  
Ultrafast Carrier ◽  
Inp Quantum Dots

Ultrafast carrier capture and relaxation in InGaAs and InAs self-organized quantum dots

1998 ◽  
Author(s):  
T. Sosnowski ◽  
J. Urayama ◽  
T. B. Norris ◽  
H. Jiang ◽  
J. Singh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Capture ◽  
Self Organized ◽  
Ultrafast Carrier

The Effect of Proton Implantation on Photoluminescence from Ensembles of InAs Quantum Dots Embedded in GaAs

2013 ◽  
Vol 774-776 ◽  
pp. 844-851
Author(s):  
N.Y. Tang ◽  
Hao Yang Cui
Keyword(s):  
Quantum Dots ◽  
Annealing Temperature ◽  
Light Emission ◽  
Implantation Dose ◽  
Inas Quantum Dots ◽  
Carrier Capture ◽  
Implantation Damage ◽  
Main Effect ◽  
Proton Implantation ◽  
Pl Intensity

The light-emission efficiency of InAs/GaAs quantum dots (QDs) affected by proton implantation and subsequent annealing is investigated. The photoluminesce (PL) intensity is determined by the carrier capture time and non-radiative center (NRC) lifetime. The intermixing-induced carrier capture enhancement and the implantation-induced NRC generation mutually compete, so there exists a critical implantation dose (). When is less than , the intermixing is the main effect and the PL intensity increases with . On the other hand, when is larger than , the implantation damage is so large that the intensity decreases with the dose. The higher the annealing temperature is, the larger becomes.

Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics

2019 ◽  
Vol 34 (9) ◽  
pp. 095017 ◽  
Author(s):  
Arka Chatterjee ◽  
Debiprasad Panda ◽  
Jayita Patwari ◽  
Binita Tongbram ◽  
Subhananda Chakrabarti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Strain Relaxation ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Ultrafast Carrier Dynamics ◽  
Capping Layer ◽  
Ultrafast Carrier

Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics

2019 ◽  
Vol 11 (5) ◽  
Author(s):  
Mattias Johnsson ◽  
David Rivas Góngora ◽  
Juan P. Martinez-Pastor ◽  
Thomas Volz ◽  
Luca Seravalli ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Inas Quantum Dots ◽  
Ultrafast Carrier ◽  
Carrier Redistribution
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