Ultrafast carrier capture at room temperature in InAs∕InP quantum dots emitting in the 1.55μm wavelength region

2005 ◽  
Vol 86 (17) ◽  
pp. 173109 ◽  
Author(s):  
E. W. Bogaart ◽  
R. Nötzel ◽  
Q. Gong ◽  
J. E. M. Haverkort ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Wavelength Region ◽  
Carrier Capture ◽  
Ultrafast Carrier ◽  
Inp Quantum Dots

Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

2009 ◽  
Vol 6 (S2) ◽  
pp. S650-S653
Author(s):  
L. Nevou ◽  
J. Mangeney ◽  
M. Tchernycheva ◽  
F. H. Julien ◽  
F. Guillot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

scholarly journals Spin-preserving ultrafast carrier capture and relaxation in InGaAs quantum dots

2005 ◽  
Vol 87 (15) ◽  
pp. 153113 ◽  
Author(s):  
S. Trumm ◽  
M. Wesseli ◽  
H. J. Krenner ◽  
D. Schuh ◽  
M. Bichler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Capture ◽  
Ultrafast Carrier

Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

2006 ◽  
Vol 88 (16) ◽  
pp. 163117 ◽  
Author(s):  
K. W. Sun ◽  
A. Kechiantz ◽  
B. C. Lee ◽  
C. P. Lee
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Carrier Capture ◽  
Ultrafast Carrier

Ultrafast carrier activation in resonantly excited 1.3 μm InAs/GaAs quantum dots at room temperature

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
F. Quochi ◽  
M. Dinu ◽  
J. Shah ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Ultrafast Carrier

scholarly journals Synthesis of Highly Luminescent InP/ZnS Quantum Dots with Suppressed Thermal Quenching

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 581
Author(s):  
Linyuan Lian ◽  
Youyou Li ◽  
Daoli Zhang ◽  
Jianbing Zhang
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Room Temperature ◽  
Thermal Quenching ◽  
Sensitivity Function ◽  
Photoluminescence Quantum Yield ◽  
Phosphorus Source ◽  
Down Conversion ◽  
Inp Quantum Dots

InP quantum dots (QDs) are promising down-conversion phosphors for white light LEDs. However, the mainstream InP QDs synthesis uses expensive phosphorus source. Here, economic, in situ-generated PH3 is used to synthesize InP QDs and a two-step coating of ZnS shells is developed to prepare highly luminescent InP/ZnS/ZnS QDs. The QDs show a photoluminescence quantum yield as high as 78.5%. The emission can be tuned by adjusting the halide precursor and yellow emissive InP/ZnS/ZnS QDs are prepared by judiciously controlling the synthetic conditions. The yellow QDs show suppressed thermal quenching and retain >90% room temperature PL intensity at 150 °C for the growth solution. Additionally, the PL spectrum matches with the eye sensitivity function, resulting in efficient InP QD white light LEDs.

Ultrafast carrier capture and relaxation in InGaAs and InAs self-organized quantum dots

1998 ◽  
Author(s):  
T. Sosnowski ◽  
J. Urayama ◽  
T. B. Norris ◽  
H. Jiang ◽  
J. Singh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Capture ◽  
Self Organized ◽  
Ultrafast Carrier

Two-state lasing at room temperature in InAs/InP quantum dots

2019 ◽  
Vol 126 (13) ◽  
pp. 133102 ◽  
Author(s):  
Yiling Xiong ◽  
Xiupu Zhang
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inp Quantum Dots
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