Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics

2019 ◽  
Vol 11 (5) ◽  
Author(s):  
Mattias Johnsson ◽  
David Rivas Góngora ◽  
Juan P. Martinez-Pastor ◽  
Thomas Volz ◽  
Luca Seravalli ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Inas Quantum Dots ◽  
Ultrafast Carrier ◽  
Carrier Redistribution

Interface engineered wetting-layer-free InAs quantum dots on GaAs(001)

2015 ◽  
Author(s):  
Manori V. Gunasekera ◽  
Dinghao Tang ◽  
Irene Rusakova ◽  
David J. Smith ◽  
Alexandre Freundlich
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Inas Quantum Dots

Extremely Low Density InAs Quantum Dots with No Wetting Layer

2007 ◽  
Vol 24 (4) ◽  
pp. 1025-1028 ◽  
Author(s):  
Huang She-Song ◽  
Niu Zhi-Chuan ◽  
Ni Hai-Qiao ◽  
Zhan Feng ◽  
Zhao Huan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Wetting Layer ◽  
Inas Quantum Dots

Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

2006 ◽  
Vol 88 (16) ◽  
pp. 163117 ◽  
Author(s):  
K. W. Sun ◽  
A. Kechiantz ◽  
B. C. Lee ◽  
C. P. Lee
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Carrier Capture ◽  
Ultrafast Carrier

Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap

2015 ◽  
Vol 425 ◽  
pp. 106-109 ◽  
Author(s):  
X.M. Lu ◽  
S. Matsubara ◽  
Y. Nakagawa ◽  
T. Kitada ◽  
T. Isu
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Inas Quantum Dots

Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots

2010 ◽  
Vol 148-149 ◽  
pp. 897-902
Author(s):  
Jian Ming Yao ◽  
Ling Min Kong ◽  
Shi Lai Wang
Keyword(s):  
Quantum Dots ◽  
Integral Intensity ◽  
Wetting Layer ◽  
Ingaas Layer ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Strained Layer ◽  
Gaas Matrix ◽  
Electronic Microscope ◽  
Temperature Dependent Photoluminescence

The influences of a thin InGaAs layer grown on GaAs(100) substrate before deposited InAs self-assembled quantum dots(SAQDs) were experimentally investigated. Scanning electronic microscope (SEM) measurements show that the InGaAs strained layer may release the strain between wetting layer and QDs, and then enlarge size of QDs. When the thickness of InAs layer is small, the QDs are chained. Temperature dependent photoluminescence (TDPL) measurements show that the PL peaks of InAs QDs with In0.1Ga0.9As show much more red shift compared with the QDs directly deposited on GaAs matrix, and PL integral intensity enhances as T rises from 50K to 90K. We attribute this enhancement to the small potential barrier between WL and QDs produced by the InGaAs stained layer.

Effects of high potential barrier on InAs quantum dots and wetting layer

2002 ◽  
Vol 91 (8) ◽  
pp. 5055-5059 ◽  
Author(s):  
Jin Soo Kim ◽  
Phil Won Yu ◽  
Jae-Young Leem ◽  
Minhyon Jeon ◽  
Sam Kyu Noh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Potential Barrier ◽  
High Potential ◽  
Wetting Layer ◽  
Inas Quantum Dots ◽  
High Potential Barrier

OPTICAL PROPERTIES OF POPULATED InAs/GaAs QUANTUM DOTS

2003 ◽  
Vol 02 (04n05) ◽  
pp. 265-269
Author(s):  
JIA-REN LEE ◽  
C.-R. LU ◽  
W. I. LEE ◽  
S. C. LEE
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Energy Level ◽  
Energy Levels ◽  
Wetting Layer ◽  
Photoluminescence Spectra ◽  
Inas Quantum Dots ◽  
Different Temperatures ◽  
Spectral Profiles ◽  
Equal Spacing

The optical properties of InAs/GaAs Quantum Dots have been studied by comparing the photoreflectance and photoluminescence spectra at different temperatures. The photoreflectance relative spectral intensity between the contributions from InAs wetting layer and the GaAs increases with the decreasing of temperature. The photoluminescence spectral profiles consist of contributions from the equal spacing energy levels of the InAs quantum dots. Since the quantum dot transitions were observed in the photoluminescence spectra and the wetting layer transitions were observed in the photoreflectance spectra, we propose that the Fermi level of the system is located between energy level of the wetting layer and the populated energy level of the quantum dots.

Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics

2019 ◽  
Vol 34 (9) ◽  
pp. 095017 ◽  
Author(s):  
Arka Chatterjee ◽  
Debiprasad Panda ◽  
Jayita Patwari ◽  
Binita Tongbram ◽  
Subhananda Chakrabarti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Strain Relaxation ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Ultrafast Carrier Dynamics ◽  
Capping Layer ◽  
Ultrafast Carrier
Sign in / Sign up

Export Citation Format

Share Document