scholarly journals Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

2017 ◽  
Vol 407 ◽  
pp. 371-378 ◽  
Author(s):  
Turgut Yilmaz ◽  
William Hines ◽  
Fu-Chang Sun ◽  
Ivo Pletikosić ◽  
Joseph Budnick ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Topological Insulator ◽  
Chemical Environment ◽  
Surface Deposition

Electronic structure and chemical environment of silicon nanoclusters embedded in a silicon dioxide matrix

2006 ◽  
Vol 88 (16) ◽  
pp. 163103 ◽  
Author(s):  
Anna Zimina ◽  
Stefan Eisebitt ◽  
Wolfgang Eberhardt ◽  
Johannes Heitmann ◽  
Margit Zacharias
Keyword(s):  
Electronic Structure ◽  
Silicon Dioxide ◽  
Chemical Environment ◽  
Silicon Nanoclusters ◽  
Silicon Dioxide Matrix

scholarly journals Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

2019 ◽  
Vol 100 (19) ◽  
Author(s):  
I. A. Shvets ◽  
I. I. Klimovskikh ◽  
Z. S. Aliev ◽  
M. B. Babanly ◽  
F. J. Zúñiga ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Topological Insulator ◽  
Wide Band ◽  
Wide Band Gap ◽  
Surface Electronic Structure

scholarly journals Temperature-dependent electronic structure in a higher-order topological insulator candidate EuIn2As2

2020 ◽  
Vol 102 (16) ◽  
Author(s):  
Sabin Regmi ◽  
M. Mofazzel Hosen ◽  
Barun Ghosh ◽  
Bahadur Singh ◽  
Gyanendra Dhakal ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Topological Insulator ◽  
Higher Order ◽  
Temperature Dependent

scholarly journals Signatures of temperature driven antiferromagnetic transition in the electronic structure of topological insulator MnBi2Te4

APL Materials ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 021105 ◽  
Author(s):  
D. A. Estyunin ◽  
I. I. Klimovskikh ◽  
A. M. Shikin ◽  
E. F. Schwier ◽  
M. M. Otrokov ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Topological Insulator ◽  
Antiferromagnetic Transition

scholarly journals Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Wonhee Ko ◽  
Insu Jeon ◽  
Hyo Won Kim ◽  
Hyeokshin Kwon ◽  
Se-Jong Kahng ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Topological Insulator ◽  
Atomic And Electronic Structure

scholarly journals Electronic Structure of the Dark Surface of the Weak Topological Insulator Bi14Rh3I9

ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 3995-4003 ◽  
Author(s):  
Christian Pauly ◽  
Bertold Rasche ◽  
Klaus Koepernik ◽  
Manuel Richter ◽  
Sergey Borisenko ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Topological Insulator

scholarly journals Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO3

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jihwey Park ◽  
Yeong-Ah Soh ◽  
Gabriel Aeppli ◽  
Xiao Feng ◽  
Yunbo Ou ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Transport Properties ◽  
Topological Insulator ◽  
Topological Insulators ◽  
Surface States ◽  
Crystal Quality ◽  
X Rays ◽  
Capping Layer ◽  
Subtle Effect

Abstract Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) films grown on SrTiO3 (1 1 1) substrates with and without a Te capping layer. We find that both the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

2012 ◽  
Vol 407 (17) ◽  
pp. 3664-3670 ◽  
Author(s):  
Haiyan Wang ◽  
Xiongwen Chen ◽  
Xiaoying Zhou ◽  
Lebo Zhang ◽  
Guanghui Zhou
Keyword(s):  
Electronic Structure ◽  
Topological Insulator
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