Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

2006 ◽  
Vol 88 (13) ◽  
pp. 132102 ◽  
Author(s):  
K. D. Moiseev ◽  
E. V. Ivanov ◽  
G. G. Zegrya ◽  
M. P. Mikhailova ◽  
Yu. P. Yakovlev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Organic Vapor ◽  
Metal Organic

In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

2014 ◽  
Vol 115 (9) ◽  
pp. 094906 ◽  
Author(s):  
Guangxu Ju ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
Hiroshi Amano
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Organic Vapor ◽  
Metal Organic

Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine

1999 ◽  
Vol 595 ◽  
Author(s):  
T. Schmidtling ◽  
M. Klein ◽  
U.W. Pohl ◽  
W. Richter
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Nitrogen Contents ◽  
Room Temperature Luminescence

AbstractGaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

scholarly journals Metal organic vapor phase epitaxy of GaAsN/GaAs Quantum wells using Tertiarybutylhydrazine

2000 ◽  
Vol 5 (S1) ◽  
pp. 230-237 ◽  
Author(s):  
T. Schmidtling ◽  
M. Klein ◽  
U.W. Pohl ◽  
W. Richter
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Nitrogen Contents ◽  
Room Temperature Luminescence

GaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cascade Lasers

Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4330-4337 ◽  
Author(s):  
Akanksha Kapoor ◽  
Nan Guan ◽  
Martin Vallo ◽  
Agnes Messanvi ◽  
Lorenzo Mancini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Ingan Quantum Wells

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

2011 ◽  
Vol 98 (23) ◽  
pp. 233107 ◽  
Author(s):  
A. De Luna Bugallo ◽  
L. Rigutti ◽  
G. Jacopin ◽  
F. H. Julien ◽  
C. Durand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Wire ◽  
Organic Vapor ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Metal
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