scholarly journals Near infrared absorption and room temperature photovoltaic response in AlN∕GaN superlattices grown by metal-organic vapor-phase epitaxy

2006 ◽  
Vol 89 (4) ◽  
pp. 041106 ◽  
Author(s):  
E. Baumann ◽  
F. R. Giorgetta ◽  
D. Hofstetter ◽  
S. Golka ◽  
W. Schrenk ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Near Infrared ◽  
Vapor Phase Epitaxy ◽  
Photovoltaic Response ◽  
Organic Vapor ◽  
Metal Organic

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cascade Lasers

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

2006 ◽  
Vol 88 (13) ◽  
pp. 132102 ◽  
Author(s):  
K. D. Moiseev ◽  
E. V. Ivanov ◽  
G. G. Zegrya ◽  
M. P. Mikhailova ◽  
Yu. P. Yakovlev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Organic Vapor ◽  
Metal Organic

Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine

1999 ◽  
Vol 595 ◽  
Author(s):  
T. Schmidtling ◽  
M. Klein ◽  
U.W. Pohl ◽  
W. Richter
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Nitrogen Contents ◽  
Room Temperature Luminescence

AbstractGaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

scholarly journals Metal organic vapor phase epitaxy of GaAsN/GaAs Quantum wells using Tertiarybutylhydrazine

2000 ◽  
Vol 5 (S1) ◽  
pp. 230-237 ◽  
Author(s):  
T. Schmidtling ◽  
M. Klein ◽  
U.W. Pohl ◽  
W. Richter
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Nitrogen Contents ◽  
Room Temperature Luminescence

GaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (10) ◽  
pp. 101001 ◽  
Author(s):  
Kimihito Ooyama ◽  
Katsuya Sugawara ◽  
Shinya Okuzaki ◽  
Hiroyuki Taketomi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic
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