Influence of the cavity on the low-temperature photoluminescence of SiGe∕Si multiquantum wells grown on a silicon-on-insulator substrate

2006 ◽  
Vol 88 (12) ◽  
pp. 121901 ◽  
Author(s):  
C. B. Li ◽  
B. W. Cheng ◽  
Y. H. Zuo ◽  
A. P. Morrison ◽  
J. Z. Yu ◽  
...  
1987 ◽  
Vol 107 ◽  
Author(s):  
J. Weber ◽  
H. Baumgart ◽  
J. Petruzzello ◽  
G.K. Celler

AbstractSingle crystal silicon films on top of a buried SiO2 layer were produced by implanting 1.7x10180+ions/cm2 at 150keV into (100) Czochralski silicon, followed by annealing at higher temperatures. The defect properties of the layers are studied after each processing step by low temperature photoluminescence measurements and transmission electron micrography (TEM). Dislocation-related photoluminescence signals correlate with their TEM observations in the same samples. The photoluminescence method proves to be a very versatile and convenient method for characterizing the quality of silicon-on-insulat or structures.


1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang

2016 ◽  
Vol 169 ◽  
pp. 326-333 ◽  
Author(s):  
S. Pal ◽  
A. Sarkar ◽  
P. Kumar ◽  
D. Kanjilal ◽  
T. Rakshit ◽  
...  

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  

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