Annealing Effect on the Properties of Cu(In0.7 Ga0.3 )Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition

2013 ◽  
Vol 96 (8) ◽  
pp. 2419-2423 ◽  
Author(s):  
Mu-Gong Tsai ◽  
Hsien-Tse Tung ◽  
In-Gann Chen ◽  
Chia-Chuan Chen ◽  
Yun-Fang Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Annealing Effect ◽  
Laser Deposition ◽  
Femtosecond Pulsed Laser

Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Low Energy ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Oxide Thin Films ◽  
Femtosecond Pulsed Laser

scholarly journals Femtosecond pulsed laser deposition of silicon thin films

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Matthew Murray ◽  
Gin Jose ◽  
Billy Richards ◽  
Animesh Jha
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Thin Films ◽  
Femtosecond Pulsed Laser

Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition

2000 ◽  
Vol 88 (11) ◽  
pp. 6937-6939 ◽  
Author(s):  
E. Millon ◽  
O. Albert ◽  
J. C. Loulergue ◽  
J. Etchepare ◽  
D. Hulin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Femtosecond Pulsed Laser

Femtosecond pulsed laser deposition of thin films upon direct and inverse transfer of ablated particles of foam graphite in the nitrogen atmosphere

2007 ◽  
Vol 37 (3) ◽  
pp. 285-289 ◽  
Author(s):  
Vyacheslav M Gordienko ◽  
Vladimir A Dyakov ◽  
Yurii Ya Kuzyakov ◽  
Ivan A Makarov ◽  
Evegenii V Rakov ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Atmosphere ◽  
Laser Deposition ◽  
Femtosecond Pulsed Laser

Femtosecond pulsed laser deposition of nanostructured ITO thin films

2007 ◽  
Vol 27 (5-8) ◽  
pp. 1034-1037 ◽  
Author(s):  
R. Teghil ◽  
D. Ferro ◽  
A. Galasso ◽  
A. Giardini ◽  
V. Marotta ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ito Thin Films ◽  
Femtosecond Pulsed Laser

Structure-Property Relationships of Tin Dioxide Thin Films Grown on Sapphire Substrates by Femtosecond Pulsed Laser Deposition

2000 ◽  
Vol 654 ◽  
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Tin Dioxide ◽  
Pulsed Laser ◽  
Crystal Defects ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Reducing Gases ◽  
Femtosecond Pulsed Laser

AbstractThe sensitivity of semiconductive tin dioxide (SnO2) to reducing gases is determinedby the electrical conductivity change in the material. This change in conductivity strongly dependson the thickness of the electron depletion layer near the oxide film surface. In this paper we study the effect of crystal defects and interfaces on the electrical properties and the gas sensing performance of SnO2 thin films. SnO2 thin films with the thickness varying from 15 nm to 100 nm were deposited on sapphire substrates with different surface crystallographic orientations by femtosecond pulsed laser deposition. Films grown on the (1012) sapphire (R-cut) are epitaxial, single crystal. High resolution transmission electron microscopy studies showed the existence of a large number of crystal defects including crystallographic shear planes and misfit dislocations at the film/substrate interface. Films grown on the (0001) sapphire substrates (Ccut) are nanocrystalline with (200) texture. The gas sensitivity of the films was measuredin a gas reactor at high temperature. It was found that the sensitivity to reducing gases increases with decreasing film thickness. Electrical transport properties of the SnO2 thin films were investigated byHall effect measurements. Models correlating the microstructures of thin films to electrical properties are proposed.

Epitaxial SnO2 thin films grown on (1̄012) sapphire by femtosecond pulsed laser deposition

2002 ◽  
Vol 91 (3) ◽  
pp. 1060-1065 ◽  
Author(s):  
J. E. Dominguez ◽  
X. Q. Pan ◽  
L. Fu ◽  
P. A. Van Rompay ◽  
Z. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sno2 Thin Films ◽  
Femtosecond Pulsed Laser
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