scholarly journals Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

2006 ◽  
Vol 99 (4) ◽  
pp. 046104 ◽  
Author(s):  
H. Y. Liu ◽  
M. J. Steer ◽  
T. J. Badcock ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Cap Layer

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Electrically driven light emission from single colloidal quantum dots at room temperature

2007 ◽  
Vol 90 (2) ◽  
pp. 023110 ◽  
Author(s):  
Hao Huang ◽  
August Dorn ◽  
Vladimir Bulovic ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Colloidal Quantum Dots

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

2005 ◽  
Vol 87 (7) ◽  
pp. 071111 ◽  
Author(s):  
W.-Y. Chen ◽  
W.-H. Chang ◽  
H.-S. Chang ◽  
T. M. Hsu ◽  
Chien-Chieh Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Light Emission ◽  
Inas Quantum Dots ◽  
Single Defect ◽  
Photonic Crystal Microcavities

Luminescence Study of Self-Assembled, Silicon Quantum Dots

1998 ◽  
Vol 536 ◽  
Author(s):  
S. Miyazaki ◽  
K. Shiba ◽  
N. Miyoshi ◽  
K. Etoh ◽  
A. Kohno ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Surface Passivation ◽  
Light Emission ◽  
Stokes Shift ◽  
Chemical Vapor ◽  
Life Time ◽  
Areal Density ◽  
Silicon Quantum Dots ◽  
Self Assembled

AbstractHemispherical silicon quantum dots (QDs) have been self-assembled with an areal density as high as ~2−1011 cm−2 on SiO2/Si(100) and quartz substrates by controlling the early states of low pressure chemical vapor deposition (LPCVD) of pure silane. It is found that, for the thermally-oxidized Si QDs, when the mean Si dot height is decreased from 6.3 nm to 1~2 nm, the photoluminescence (PL) peak energy is increased from 1.2 to 1.4 eV at room temperature while the optical absorption edge determined by photothermal deflection spectroscopy is shifted from 1.9 to 2.5 eV. In addition to the observed Stokes shift as large as 0.7−1.1 eV, a weak temperature dependence of the broad luminescence band and non-exponential luminescence decay with a mean life time of sub-msec even at room temperature suggest that localized, radiative recombination centers existing presumably in the SiO2/Si dot interface are responsible for the efficient PL from the Si QDs. From the change in room temperature PL by SiO2 thinning and removal in a dilute HF solution, it is demonstrated that the surface passivation of Si QDs plays an important role for the efficient light emission at room temperature.

Room-temperature light-emission from Ge quantum dots in photonic crystals

2008 ◽  
Vol 517 (1) ◽  
pp. 125-127 ◽  
Author(s):  
Jinsong Xia ◽  
Koudai Nemoto ◽  
Yuta Ikegami ◽  
Noritaka Usami ◽  
Yasushi Nakata ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Room Temperature ◽  
Light Emission ◽  
Ge Quantum Dots

Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

2013 ◽  
Vol 378 ◽  
pp. 636-639 ◽  
Author(s):  
Xuejun Xu ◽  
Noritaka Usami ◽  
Takuya Maruizumi ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Light Emission ◽  
Ge Quantum Dots

Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

2009 ◽  
Vol 6 (S2) ◽  
pp. S650-S653
Author(s):  
L. Nevou ◽  
J. Mangeney ◽  
M. Tchernycheva ◽  
F. H. Julien ◽  
F. Guillot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Carrier Relaxation ◽  
Ultrafast Carrier
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