Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

2009 ◽  
Vol 6 (S2) ◽  
pp. S650-S653
Author(s):  
L. Nevou ◽  
J. Mangeney ◽  
M. Tchernycheva ◽  
F. H. Julien ◽  
F. Guillot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

Ultrafast carrier capture at room temperature in InAs∕InP quantum dots emitting in the 1.55μm wavelength region

2005 ◽  
Vol 86 (17) ◽  
pp. 173109 ◽  
Author(s):  
E. W. Bogaart ◽  
R. Nötzel ◽  
Q. Gong ◽  
J. E. M. Haverkort ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Wavelength Region ◽  
Carrier Capture ◽  
Ultrafast Carrier ◽  
Inp Quantum Dots

Ultrafast carrier activation in resonantly excited 1.3 μm InAs/GaAs quantum dots at room temperature

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
F. Quochi ◽  
M. Dinu ◽  
J. Shah ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Ultrafast Carrier

Ultrafast carrier-relaxation dynamics in self-assembled InAs/GaAs quantum dots

2002 ◽  
Vol 19 (6) ◽  
pp. 1480 ◽  
Author(s):  
Dzmitry A. Yarotski ◽  
Richard D. Averitt ◽  
Nicolas Negre ◽  
Scott A. Crooker ◽  
Antoinette J. Taylor ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Relaxation Dynamics ◽  
Carrier Relaxation ◽  
Ultrafast Carrier ◽  
Self Assembled ◽  
Carrier Relaxation Dynamics

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Room temperature synthesis of Sn2+ doped highly luminescent CsPbBr3 quantum dots for high CRI white light-emitting diodes

Nanoscale ◽  
2021 ◽  
Author(s):  
Dongdong Yan ◽  
Qionghua Mo ◽  
Shuangyi Zhao ◽  
Wensi Cai ◽  
Zhigang Zang
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
White Light ◽  
Room Temperature ◽  
Temperature Synthesis ◽  
Light Emitting ◽  
Photoluminescence Quantum Yield ◽  
Hot Injection ◽  
White Light Emitting Diodes ◽  
Cspbbr3 Quantum Dots

With a high photoluminescence quantum yield (PLQY) being able to exceed 90% for those prepared by hot injection method, CsPbBr3 quantum dots (QDs) have attracted intensive attentions for white light-emitting...

scholarly journals Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 690
Author(s):  
Leonardo Ranasinghe ◽  
Christian Heyn ◽  
Kristian Deneke ◽  
Michael Zocher ◽  
Roman Korneev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Penetration Depth ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Green Laser ◽  
Significant Loss ◽  
Blue Laser ◽  
Ambient Conditions ◽  
Thermal Escape ◽  
Intensity Loss

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at T = 200 K, which is obtained using an inexpensive thermoelectric cooler. An optimized sample with an AlGaAs barrier layer thicker than the penetration depth of the exciting green laser light (532 nm) demonstrates clear QD peaks already at room temperature. Samples with thin AlGaAs layers show room temperature emission from the QDs when a blue laser (405 nm) with a reduced optical penetration depth is used for excitation. A model and a fit to the experimental behavior identify dissociation of excitons in the barrier below T = 100 K and thermal escape of excitons from QDs above T = 160 K as the central processes causing PL-intensity loss.

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