Electrically driven light emission from single colloidal quantum dots at room temperature

2007 ◽  
Vol 90 (2) ◽  
pp. 023110 ◽  
Author(s):  
Hao Huang ◽  
August Dorn ◽  
Vladimir Bulovic ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Colloidal Quantum Dots

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Однофотонное излучение одиночной квантовой точки CdTeSe/ZnS в ближнем инфракрасном диапазоне при комнатной температуре

2021 ◽  
Vol 47 (21) ◽  
pp. 3
Author(s):  
Siyue Jin ◽  
Xingsheng Xu
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Auger Recombination ◽  
Single Photon ◽  
Irradiation Time ◽  
Colloidal Quantum Dots ◽  
Single Quantum ◽  
Illumination Time ◽  
Single Quantum Dots ◽  
Single Quantum Dot

In this study, the photostability of a CdTeSe/ZnS colloidal single photon emitter with a wavelength of 800nm at room temperature was investigated. The second-order correlation function was much smaller than 0.1, which proved that the CdTeSe/ZnS single quantum dot at 800nm is a highly pure single-photon emitter. The effects of the irradiation time on the optical properties from single quantum dots were analyzed. As the illumination time increased, the emission of biexciton and multiexciton in the colloidal quantum dots increased, and the occurrence of Auger recombination increased.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

2005 ◽  
Vol 87 (7) ◽  
pp. 071111 ◽  
Author(s):  
W.-Y. Chen ◽  
W.-H. Chang ◽  
H.-S. Chang ◽  
T. M. Hsu ◽  
Chien-Chieh Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Light Emission ◽  
Inas Quantum Dots ◽  
Single Defect ◽  
Photonic Crystal Microcavities

Polarized Single Photons from Colloidal Quantum Dots in Chiral Microcavities at Room Temperature

2009 ◽  
Author(s):  
Luke J. Bissell ◽  
Svetlana G. Lukishova ◽  
Roger A. Smith ◽  
Mayukh Lahiri ◽  
Carlos R. Stroud, Jr. ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Colloidal Quantum Dots ◽  
Single Photons

scholarly journals Active Liquid Crystal Tuning of Metallic Nanoantenna Enhanced Light Emission from Colloidal Quantum Dots

Nano Letters ◽  
2014 ◽  
Vol 14 (10) ◽  
pp. 5555-5560 ◽  
Author(s):  
Aimi Abass ◽  
Said Rahimzadeh-Kalaleh Rodriguez ◽  
Thomas Ako ◽  
Tangi Aubert ◽  
Marc Verschuuren ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Liquid Crystal ◽  
Light Emission ◽  
Colloidal Quantum Dots ◽  
Active Liquid

scholarly journals Colloidal quantum-dots surface and device structure engineering for high-performance light-emitting diodes

2017 ◽  
Vol 4 (2) ◽  
pp. 170-183 ◽  
Author(s):  
Yuequn Shang ◽  
Zhijun Ning
Keyword(s):  
Quantum Dots ◽  
Surface Engineering ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Peak ◽  
Colloidal Quantum Dots ◽  
Device Structure ◽  
Light Emitting ◽  
Device Architecture ◽  
Architecture Optimization

Abstract The application of colloidal quantum dots for light-emitting devices has attracted considerable attention in recent years, due to their unique optical properties such as size-dependent emission wavelength, sharp emission peak and high luminescent quantum yield. Tremendous efforts have been made to explore quantum dots for light-emission applications such as light-emitting diodes (LEDs) and light converters. The performance of quantum-dots-based light-emitting diodes (QD-LEDs) has been increasing rapidly in recent decades as the development of quantum-dots synthesis, surface-ligand engineering and device-architecture optimization. Recently, the external quantum efficiencies of red quantum-dots LEDs have exceeded 20.5% with good stability and narrow emission peak. In this review, we summarize the recent advances in QD-LEDs, focusing on quantum-dot surface engineering and device-architecture optimization.

scholarly journals Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

2006 ◽  
Vol 99 (4) ◽  
pp. 046104 ◽  
Author(s):  
H. Y. Liu ◽  
M. J. Steer ◽  
T. J. Badcock ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Cap Layer
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