Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs∕GaAs quantum wells

2006 ◽  
Vol 88 (1) ◽  
pp. 011912 ◽  
Author(s):  
Z. Sun ◽  
Z. Y. Xu ◽  
X. D. Yang ◽  
B. Q. Sun ◽  
Y. Ji ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nonradiative Recombination ◽  
Photoluminescence Decay ◽  
Recombination Effect

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Al x Ga1− x N-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination

2018 ◽  
Vol 7 (2) ◽  
pp. 1801106 ◽  
Author(s):  
Minehiro Hayakawa ◽  
Shuhei Ichikawa ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Nonradiative Recombination

Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB37 ◽  
Author(s):  
M. Ismail Hossain ◽  
Yuri Itokazu ◽  
Shunsuke Kuwaba ◽  
Norihiko Kamata ◽  
Noritoshi Maeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nonradiative Recombination ◽  
Excitation Light ◽  
Recombination Centers ◽  
Deep Uv

scholarly journals Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence

2015 ◽  
Vol 43 ◽  
pp. 1-9
Author(s):  
Norihiko Kamata ◽  
Abu Zafor Md. Touhidul Islam
Keyword(s):  
Quantum Wells ◽  
Electrical Contact ◽  
Intensity Change ◽  
Nonradiative Recombination ◽  
Excitation Light ◽  
Light Emitting ◽  
Recombination Centers ◽  
Pl Intensity ◽  
Trap Filling

We have developed an optical method of detecting and characterizing nonradiative recombination (NRR) centers without electrical contact. The method combines a below-gap excitation (BGE) light with a conventional above-gap excitation light in photoluminescence (PL) measurement, and discriminates the PL intensity change due to switching on and off the BGE. A quantitative analysis of the detected NRR centers became possible by utilizing the saturating tendency of the PL intensity change with increasing the BGE density due to trap filling effect. Some experimental results of AlGaAs, InGaN, and AlGaN quantum wells were shown to allocate the development and present status as well as to exemplify their interpretations.

scholarly journals Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells

2001 ◽  
Vol 90 (7) ◽  
pp. 3650-3652 ◽  
Author(s):  
C. H. Chia ◽  
T. Makino ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Nonradiative Recombination

scholarly journals Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions

2000 ◽  
Vol 5 (S1) ◽  
pp. 977-983
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Recombination Rates ◽  
Satellite Peak ◽  
Interface Quality

The effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region

2014 ◽  
Vol 11 (3-4) ◽  
pp. 832-835 ◽  
Author(s):  
A. Z. M. Touhidul Islam ◽  
N. Murakoshi ◽  
T. Fukuda ◽  
H. Hirayama ◽  
N. Kamata
Keyword(s):  
Quantum Wells ◽  
Optical Detection ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Deep Uv
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