Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface

2005 ◽  
Vol 87 (26) ◽  
pp. 261914 ◽  
Author(s):  
Jong Su Kim ◽  
Mitsuo Kawabe ◽  
Nobuyki Koguchi ◽  
Dong-Yul Lee ◽  
Jin Soo Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Atomic Hydrogen ◽  
Gaas Surface ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures

2003 ◽  
Vol 94 (10) ◽  
pp. 6603-6606 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Matrix effects on the structural and optical properties of InAs quantum dots

2001 ◽  
Vol 79 (22) ◽  
pp. 3681-3683 ◽  
Author(s):  
J. X. Chen ◽  
U. Oesterle ◽  
A. Fiore ◽  
R. P. Stanley ◽  
M. Ilegems ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Matrix Effects ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

2007 ◽  
Vol 300 (2) ◽  
pp. 319-323 ◽  
Author(s):  
Ho Jin Park ◽  
Jong Ho Kim ◽  
J.J. Yoon ◽  
J.S. Son ◽  
D.Y. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Annealing Effects

Structural and optical properties of shape-engineered InAs quantum dots

2003 ◽  
Vol 94 (4) ◽  
pp. 2486-2490 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Won Seok Han ◽  
Ho-Sang Kwack ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

Sign in / Sign up

Export Citation Format

Share Document