Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy

2005 ◽  
Vol 87 (24) ◽  
pp. 242105 ◽  
Author(s):  
D. Wang ◽  
C. -C. Tin ◽  
J. R. Williams ◽  
M. Park ◽  
Y. S. Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Self Assembled ◽  
Raman Characterization

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

scholarly journals Self Assembly of semiconductor nanostructures

Respuestas ◽  
2016 ◽  
Vol 12 (2) ◽  
pp. 47-51
Author(s):  
Máximo López-López ◽  
Esteban Cruz-Hernández ◽  
Isaac Martínez-Velis ◽  
Juan Salvador Rojas-Ramírez ◽  
Manolo Ramirez-Lopez ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Self Assembly ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Preferential Growth ◽  
Growth Method ◽  
Strong Surface ◽  
Self Assembled

 Abstract In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) with SAQWRs by the Stransky–Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.Keywords : Quantum wires, quantum dots; selfassembly; molecular beam epitaxy.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled
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