Molecular beam epitaxy growth and characterization of self-assembled MnAs wires on highly oriented pyrolytic graphite

S. Hegde; E. Fraser; J. Kwon; H. Luo

doi:10.1116/1.3357280

Molecular beam epitaxy growth and characterization of self-assembled MnAs wires on highly oriented pyrolytic graphite

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3357280 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3E6-C3E9

Author(s):

S. Hegde ◽

E. Fraser ◽

J. Kwon ◽

H. Luo

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Pyrolytic Graphite ◽

Molecular Beam Epitaxy Growth ◽

Highly Oriented Pyrolytic Graphite ◽

Self Assembled

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Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates

Applied Surface Science ◽

10.1016/s0169-4332(01)00876-5 ◽

2002 ◽

Vol 190 (1-4) ◽

pp. 226-230

Author(s):

B.H. Koo ◽

Y.-G. Park ◽

H. Makino ◽

J.H. Chang ◽

T. Hanada ◽

...

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Inas Quantum Dots ◽

Self Assembled ◽

Inp Substrates

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Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106099 ◽

2021 ◽

Vol 135 ◽

pp. 106099

Author(s):

Qihua Zhang ◽

Xue Yin ◽

Eli Martel ◽

Songrui Zhao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Si Substrate ◽

Rich Condition

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Cited By ~ 12

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591440 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1623 ◽

Cited By ~ 4

Author(s):

T. C. Hasenberg ◽

P. S. Day ◽

E. M. Shaw ◽

D. J. Magarrell ◽

J. T. Olesberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Laser Diodes ◽

Infrared Laser ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Midwave Infrared ◽

Broken Gap

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

High Power Laser and Particle Beams ◽

10.3788/hplpb20132506.1523 ◽

2013 ◽

Vol 25 (6) ◽

pp. 1523-1526

Author(s):

万文坚 Wan Wenjian ◽

尹嵘 Yin Rong ◽

韩英军 Han Yingjun ◽

王丰 Wang Feng ◽

郭旭光 Guo Xuguang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum

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Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.02.006 ◽

2019 ◽

Vol 512 ◽

pp. 164-168

Author(s):

Tobias Henksmeier ◽

Stepan Shvarkov ◽

Alexander Trapp ◽

Dirk Reuter

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Electrical Characterization ◽

Molecular Beam Epitaxy Growth ◽

Temperature Dependent ◽

Carbon Doped

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Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3/010 ◽

1992 ◽

Vol 7 (3) ◽

pp. 337-343 ◽

Cited By ~ 56

Author(s):

J R Soderstrom ◽

M M Cumming ◽

J -Y Yao ◽

T G Andersson

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Gaas Substrates

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Molecular beam epitaxy growth and physical characterization of precise, narrow, triangular heterostructures using an analog grading algorithm

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585649 ◽

1991 ◽

Vol 9 (6) ◽

pp. 2805 ◽

Cited By ~ 8

Author(s):

Stephen Giugni

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Physical Characterization ◽

Molecular Beam Epitaxy Growth

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Molecular beam epitaxy growth and characterization of ZnTe:Cr[sup 2+] layers on GaAs(100)

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1383075 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1483 ◽

Cited By ~ 3

Author(s):

Yu. G. Sadofyev ◽

V. F. Pevtsov ◽

E. M. Dianov ◽

P. A. Trubenko ◽

M. V. Korshkov

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

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Molecular beam epitaxy growth and characterization of self-assembled MnAs wires on highly oriented pyrolytic graphite

Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates

Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B

Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

Molecular beam epitaxy growth and physical characterization of precise, narrow, triangular heterostructures using an analog grading algorithm

Molecular beam epitaxy growth and characterization of ZnTe:Cr[sup 2+] layers on GaAs(100)

Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B