scholarly journals High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

2005 ◽  
Vol 87 (24) ◽  
pp. 241103 ◽  
Author(s):  
M. A. Mastro ◽  
R. T. Holm ◽  
N. D. Bassim ◽  
C. R. Eddy ◽  
D. K. Gaskill ◽  
...  
2022 ◽  
Author(s):  
Pedro Campos Resendre ◽  
Marisol S. Martín-González

Natural systems found ways to exploit light at the nanoscale, devising complex 3D structures that behave as photonic crystals, able to produce structural coloration. Distributed Bragg reflectors are a particular...


2009 ◽  
Vol 311 (10) ◽  
pp. 3089-3092 ◽  
Author(s):  
Zhen-Yu Li ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
Shing-Chung Wang ◽  
Ming-Hua Lo ◽  
...  

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 772
Author(s):  
Yibin Yang ◽  
Lingxia Zhang ◽  
Yu Zhao

Due to the absorption of opaque Si substrates, the luminous efficiency of GaN-based light-emitting diodes (LEDs) on Si substrates is not high. So, in this work, we insert AlN/GaN distributed Bragg reflectors (DBRs) to improve the light output of GaN-based LEDs on Si (111) substrates grown via metal organic chemical vapor deposition (MOCVD). In order to obtain the highest reflectivity of the AlN/GaN DBR stop band, the growth parameters of AlN/GaN DBRs are optimized, including the growth temperature, the V/III ratio and the growth pressure. As a consequence, the interfaces of the optimal 9-pair AlN/GaN DBRs become abrupt, and the reflectivity of the DBR stop band is as high as 85.2%, near to the calculated value (92.5%). Finally, crack-free GaN-based LEDs with 5-pair AlN/GaN DBRs are grown on Si (111) substrates. The light output of the DBR-based LED is evidently enhanced by 41.8% at the injection current of 350 mA, compared with the conventional DBR-based LED without DBRs. These results pave the way for the luminous efficiency improvement of future green and red GaN-based LEDs grown on Si substrates.


2016 ◽  
Vol 120 (9) ◽  
pp. 093107 ◽  
Author(s):  
F. Réveret ◽  
L. Bignet ◽  
W. Zhigang ◽  
X. Lafosse ◽  
G. Patriarche ◽  
...  

2001 ◽  
Vol 79 (4) ◽  
pp. 476-478 ◽  
Author(s):  
K. Kawaguchi ◽  
S. Koh ◽  
Y. Shiraki ◽  
J. Zhang

APL Photonics ◽  
2021 ◽  
Vol 6 (2) ◽  
pp. 026104
Author(s):  
Mirela Malekovic ◽  
Esteban Bermúdez-Ureña ◽  
Ullrich Steiner ◽  
Bodo D. Wilts

1977 ◽  
Vol 16 (8) ◽  
pp. 1389-1394 ◽  
Author(s):  
Masahiro Okuda ◽  
Kiyoshi Onaka ◽  
Shigeharu Kita

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