Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates

2001 ◽  
Vol 79 (4) ◽  
pp. 476-478 ◽  
Author(s):  
K. Kawaguchi ◽  
S. Koh ◽  
Y. Shiraki ◽  
J. Zhang
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Si Substrates

scholarly journals High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

2005 ◽  
Vol 87 (24) ◽  
pp. 241103 ◽  
Author(s):  
M. A. Mastro ◽  
R. T. Holm ◽  
N. D. Bassim ◽  
C. R. Eddy ◽  
D. K. Gaskill ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Si Substrates ◽  
High Reflectance

scholarly journals Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 772
Author(s):  
Yibin Yang ◽  
Lingxia Zhang ◽  
Yu Zhao
Keyword(s):  
Light Emitting Diodes ◽  
Growth Parameters ◽  
Stop Band ◽  
Light Output ◽  
Luminous Efficiency ◽  
Organic Chemical ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Light Emitting ◽  
Si Substrates

Due to the absorption of opaque Si substrates, the luminous efficiency of GaN-based light-emitting diodes (LEDs) on Si substrates is not high. So, in this work, we insert AlN/GaN distributed Bragg reflectors (DBRs) to improve the light output of GaN-based LEDs on Si (111) substrates grown via metal organic chemical vapor deposition (MOCVD). In order to obtain the highest reflectivity of the AlN/GaN DBR stop band, the growth parameters of AlN/GaN DBRs are optimized, including the growth temperature, the V/III ratio and the growth pressure. As a consequence, the interfaces of the optimal 9-pair AlN/GaN DBRs become abrupt, and the reflectivity of the DBR stop band is as high as 85.2%, near to the calculated value (92.5%). Finally, crack-free GaN-based LEDs with 5-pair AlN/GaN DBRs are grown on Si (111) substrates. The light output of the DBR-based LED is evidently enhanced by 41.8% at the injection current of 350 mA, compared with the conventional DBR-based LED without DBRs. These results pave the way for the luminous efficiency improvement of future green and red GaN-based LEDs grown on Si substrates.

scholarly journals Distributed Bragg reflectors from colloidal trilayer flake solutions

APL Photonics ◽  
2021 ◽  
Vol 6 (2) ◽  
pp. 026104
Author(s):  
Mirela Malekovic ◽  
Esteban Bermúdez-Ureña ◽  
Ullrich Steiner ◽  
Bodo D. Wilts
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

Highly Sensitive Optical Modulators with Distributed Bragg-Reflectors

1977 ◽  
Vol 16 (8) ◽  
pp. 1389-1394 ◽  
Author(s):  
Masahiro Okuda ◽  
Kiyoshi Onaka ◽  
Shigeharu Kita
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Optical Modulators ◽  
Highly Sensitive

A high-quality factor hybrid plasmonic nanocavity based on distributed Bragg reflectors

2016 ◽  
Vol 25 (9) ◽  
pp. 097302
Author(s):  
Linlin Tu ◽  
Chi Zhang ◽  
Zhong Huang ◽  
Jason Yau ◽  
Peng Zhan ◽  
...  
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
High Quality

Fabrication of three dimensional porous silicon distributed Bragg reflectors

2008 ◽  
Vol 93 (22) ◽  
pp. 221905 ◽  
Author(s):  
D. Mangaiyarkarasi ◽  
M. B. H. Breese ◽  
Y. S. Ow
Keyword(s):  
Porous Silicon ◽  
Three Dimensional ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors
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