Carbon nanotube based nonvolatile memory

2005 ◽  
Vol 87 (23) ◽  
pp. 233115 ◽  
Author(s):  
J. P. Hollingsworth ◽  
P. R. Bandaru
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory

Carbon-nanotube-based nonvolatile memory with oxide–nitride–oxide film and nanoscale channel

2003 ◽  
Vol 82 (2) ◽  
pp. 275-277 ◽  
Author(s):  
Won Bong Choi ◽  
Soodoo Chae ◽  
Eunju Bae ◽  
Jo-Won Lee ◽  
Byoung-Ho Cheong ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Oxide Film ◽  
Nonvolatile Memory ◽  
Nitride Oxide

A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM)

2010 ◽  
Author(s):  
Glen Rosendale ◽  
Sohrab Kianian ◽  
Monte Manning ◽  
Darlene Hamilton ◽  
X. M. Henry Huang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory

Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory

2010 ◽  
Vol 49 (6) ◽  
pp. 06GG13 ◽  
Author(s):  
Takahiro Ohori ◽  
Satoshi Nagaso ◽  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Hole ◽  
Effect Transistor

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

Molecular Dynamics Study of Graphene Nanoflake Shuttle Device on Graphene Nanoribbon with Carbon Nanotube Blocks

2020 ◽  
Vol 20 (9) ◽  
pp. 5570-5574
Author(s):  
Jeong Won Kang ◽  
Ki-Sub Kim ◽  
Oh-Kuen Kwon
Keyword(s):  
Molecular Dynamics ◽  
Carbon Nanotube ◽  
External Force ◽  
Nonvolatile Memory ◽  
High Speed ◽  
Building Blocks ◽  
Graphene Nanoribbon ◽  
Local Energy ◽  
Mass Storage ◽  
Potential Wells

Superlubric motions of graphene nanoflakes (GNFs) on graphene have opened up more applications of graphene for micromachines and nanomachines. Here, we investigate the dynamic behavior of a GNF shuttle on a graphene nanoribbon (GNR) with carbon nanotube (CNT) blocks via molecular dynamics simulations. The GNF moves on a GNR superlubrically, and the CNTs as building blocks induce bistable potential wells so that the GNF is stabilized. MD simulation results indicate that when a GNF shuttle approaches the CNTs, a potential well is created by an increase in the attractive van der Waals energy between the GNF and CNTs, and bistability at the local energy minima positions can be achieved near the CNTs. In order for the GNF shuttle to escape the local energy minima positions, a high external force must be applied to overcome the potential energy barrier. However, after the GNF shuttle escapes from one of the bistable positions, only a low external force is required to stabilize the GNF shuttle. This work explicitly demonstrates that a GNF-GNR/CNT system could be applied to alternative nonvolatile memory and high-speed mass storage by using GNR-CNT arrays.

A 3D stackable Carbon Nanotube-based nonvolatile memory (NRAM)

2010 ◽  
Author(s):  
Sohrab Kianian ◽  
Glen Rosendale ◽  
Monte Manning ◽  
Darlene Hamilton ◽  
X. M. Henry Huang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory

Investigation and Improvement of Verify-Program in Carbon Nanotube-Based Nonvolatile Memory

2015 ◽  
Vol 62 (9) ◽  
pp. 2837-2844 ◽  
Author(s):  
Sheyang Ning ◽  
Tomoko Ogura Iwasaki ◽  
Kazuya Shimomura ◽  
Koh Johguchi ◽  
Eisuke Yanagizawa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory
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