Carbon-nanotube-based nonvolatile memory with oxide–nitride–oxide film and nanoscale channel

2003 ◽  
Vol 82 (2) ◽  
pp. 275-277 ◽  
Author(s):  
Won Bong Choi ◽  
Soodoo Chae ◽  
Eunju Bae ◽  
Jo-Won Lee ◽  
Byoung-Ho Cheong ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Oxide Film ◽  
Nonvolatile Memory ◽  
Nitride Oxide

Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1441-1447 ◽  
Author(s):  
Hiroshi Aozasa ◽  
Ichiro Fujiwara ◽  
Akihiro Nakamura ◽  
Yasutoshi Komatsu
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Carrier Traps ◽  
Nitride Oxide

Carbon nanotube based nonvolatile memory

2005 ◽  
Vol 87 (23) ◽  
pp. 233115 ◽  
Author(s):  
J. P. Hollingsworth ◽  
P. R. Bandaru
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory

A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM)

2010 ◽  
Author(s):  
Glen Rosendale ◽  
Sohrab Kianian ◽  
Monte Manning ◽  
Darlene Hamilton ◽  
X. M. Henry Huang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory

Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory

2010 ◽  
Vol 49 (6) ◽  
pp. 06GG13 ◽  
Author(s):  
Takahiro Ohori ◽  
Satoshi Nagaso ◽  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Hole ◽  
Effect Transistor

Retention Reliability Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with N2O Oxidation Tunnel Oxide

2007 ◽  
Vol 46 (10A) ◽  
pp. 6463-6468 ◽  
Author(s):  
Jia-Lin Wu ◽  
Chin-Hsing Kao ◽  
Hua-Ching Chien ◽  
Tzung-Kuen Tsai ◽  
Chien-Wei Liao
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Oxide ◽  
Reliability Improvement ◽  
Nitride Oxide

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

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