Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation

2005 ◽  
Vol 98 (10) ◽  
pp. 103509 ◽  
Author(s):  
Yuichi Oshima ◽  
Takayuki Suzuki ◽  
Takeshi Eri ◽  
Yusuke Kawaguchi ◽  
Kazutoshi Watanabe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Microstructure and optical properties of ELO-GaN layers grown by hydride vapor phase epitaxy

2018 ◽  
pp. 321-324
Author(s):  
S Gradecak ◽  
M Albrecht ◽  
H P Strunk ◽  
D Martin ◽  
J Napierala ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

2017 ◽  
Vol 122 (20) ◽  
pp. 205302 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Tongbo Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Gan Nanowires

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Growth and doping of bulk GaN by hydride vapor phase epitaxy

2020 ◽  
Vol 29 (2) ◽  
pp. 026104 ◽  
Author(s):  
Yu-Min Zhang ◽  
Jian-Feng Wang ◽  
De-Min Cai ◽  
Guo-Qiang Ren ◽  
Yu Xu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

Microstructure and Optical Properties of Nonpolarm-Plane GaN Films Grown onm-Plane Sapphire by Hydride Vapor Phase Epitaxy

2008 ◽  
Vol 47 (5) ◽  
pp. 3346-3349 ◽  
Author(s):  
Tongbo Wei ◽  
Ruifei Duan ◽  
Junxi Wang ◽  
Jinmin Li ◽  
Ziqiang Huo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

2006 ◽  
Vol 99 (11) ◽  
pp. 116103 ◽  
Author(s):  
D. Y. Song ◽  
V. Kuryatkov ◽  
M. Basavaraj ◽  
D. Rosenbladt ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electrical And Optical Properties
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