Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

2005 ◽  
Vol 98 (9) ◽  
pp. 094504 ◽  
Author(s):  
Jinwoo Kim ◽  
Seokhoon Kim ◽  
Hyunseok Kang ◽  
Jihoon Choi ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Layer Deposition ◽  
Composition Structure

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

2005 ◽  
Vol 98 (5) ◽  
pp. 054104 ◽  
Author(s):  
D. H. Triyoso ◽  
R. I. Hegde ◽  
S. Zollner ◽  
M. E. Ramon ◽  
S. Kalpat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Titanium Addition ◽  
Layer Deposition ◽  
Film Characteristics

scholarly journals Influence of Oxidant Gas of Atomic Layer Deposition on Electrical Characteristics of Al2O3 films

2018 ◽  
Vol 61 (5) ◽  
pp. 280-285 ◽  
Author(s):  
Toshihide NABATAME ◽  
Masayuki KIMURA ◽  
Kazuya YUGE ◽  
Mari INOUE ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document