Influence of Al∕N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

2005 ◽  
Vol 87 (16) ◽  
pp. 161901 ◽  
Author(s):  
J. F. Fälth ◽  
S. K. Davidsson ◽  
X. Y. Liu ◽  
T. G. Andersson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Layer Growth ◽  
Nucleation Layer ◽  
N Flux

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011916 ◽  
Author(s):  
Lin Zhou ◽  
David J. Smith ◽  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Layer Growth ◽  
Nucleation Layer ◽  
N Flux

Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)

2001 ◽  
Vol 693 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
O. Shigiltchoff ◽  
R. P. Devatya ◽  
W. J. Choyke
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
X Ray ◽  
N Flux

AbstractGallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on vicinal 6H-SiC(0001) substrates with [1 1 00] and [11 2 0] miscut directions. The hydrogen-etched substrates display straight, or chevron shaped steps respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

scholarly journals Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

2002 ◽  
Vol 7 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
O. Shigiltchoff ◽  
R. P. Devaty ◽  
W. J. Choyke
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
X Ray ◽  
Image Position ◽  
N Flux

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 0 0] and [1 1 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

2005 ◽  
Vol 98 (1) ◽  
pp. 016109 ◽  
Author(s):  
S. K. Davidsson ◽  
J. F. Fälth ◽  
X. Y. Liu ◽  
H. Zirath ◽  
T. G. Andersson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Nucleation Layer ◽  
Bulk Gan

Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

2004 ◽  
Vol 85 (17) ◽  
pp. 3786-3788 ◽  
Author(s):  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
B. V. Shanabrook ◽  
Lin Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Layer Growth ◽  
Nucleation Layer

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 80 (5) ◽  
pp. 805-807 ◽  
Author(s):  
A. Hierro ◽  
A. R. Arehart ◽  
B. Heying ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Trap States ◽  
N Flux

Strong influence of Ga/N flux ratio on Mn incorporation into Ga1−xMnxN epilayers grown by plasma-assisted molecular beam epitaxy

2003 ◽  
Vol 83 (22) ◽  
pp. 4580-4582 ◽  
Author(s):  
S. Kuroda ◽  
E. Bellet-Amalric ◽  
R. Giraud ◽  
S. Marcet ◽  
J. Cibert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strong Influence ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux
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