Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 80 (5) ◽  
pp. 805-807 ◽  
Author(s):  
A. Hierro ◽  
A. R. Arehart ◽  
B. Heying ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Trap States ◽  
N Flux

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

2012 ◽  
Vol 101 (15) ◽  
pp. 152104 ◽  
Author(s):  
Z. Zhang ◽  
C. A. Hurni ◽  
A. R. Arehart ◽  
J. S. Speck ◽  
S. A. Ringel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Trap States

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011916 ◽  
Author(s):  
Lin Zhou ◽  
David J. Smith ◽  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Layer Growth ◽  
Nucleation Layer ◽  
N Flux

Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)

2001 ◽  
Vol 693 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
O. Shigiltchoff ◽  
R. P. Devatya ◽  
W. J. Choyke
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
X Ray ◽  
N Flux

AbstractGallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on vicinal 6H-SiC(0001) substrates with [1 1 00] and [11 2 0] miscut directions. The hydrogen-etched substrates display straight, or chevron shaped steps respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Strong influence of Ga/N flux ratio on Mn incorporation into Ga1−xMnxN epilayers grown by plasma-assisted molecular beam epitaxy

2003 ◽  
Vol 83 (22) ◽  
pp. 4580-4582 ◽  
Author(s):  
S. Kuroda ◽  
E. Bellet-Amalric ◽  
R. Giraud ◽  
S. Marcet ◽  
J. Cibert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strong Influence ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

scholarly journals Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

2002 ◽  
Vol 7 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
O. Shigiltchoff ◽  
R. P. Devaty ◽  
W. J. Choyke
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
X Ray ◽  
Image Position ◽  
N Flux

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 0 0] and [1 1 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Interfacial Stability of CoSi2/Si Structures Grown by Molecular Beam Epitaxy

1991 ◽  
Vol 237 ◽  
Author(s):  
T. George ◽  
R. W. Fathauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Driving Force ◽  
Molecular Beam ◽  
Ostwald Ripening ◽  
Flux Ratio ◽  
Interfacial Stability ◽  
Capping Layer ◽  
Si Substrates ◽  
Interfacial Strain ◽  
The Stability

ABSTRACTThe stability of CoSi2/Si interfaces was examined in this study using columnar suicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were co-deposited (1:7 flux ratio) using molecular beam epitaxy at 800°C and the resulting columnar suicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800°C results in the growth of the buried suicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The columns' sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer.In the second set of experiments, annealing of a 250nm-thick buried columnar layer at 1000°C under a 100nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker (500nm) Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The' high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

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