Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

2004 ◽  
Vol 85 (17) ◽  
pp. 3786-3788 ◽  
Author(s):  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
B. V. Shanabrook ◽  
Lin Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Layer Growth ◽  
Nucleation Layer

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011916 ◽  
Author(s):  
Lin Zhou ◽  
David J. Smith ◽  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Layer Growth ◽  
Nucleation Layer ◽  
N Flux

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation

1991 ◽  
Vol 30 (Part 2, No. 1B) ◽  
pp. L106-L109 ◽  
Author(s):  
Shin Yokoyama ◽  
Takayuki Ishibashi ◽  
Masaaki Yamagami ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Uv Irradiation ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Growth

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Kareem M. Shoukri ◽  
Yaser M. Haddara ◽  
Andrew P. Knights ◽  
Paul G. Coleman ◽  
Mohammad M. Rahman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Point Defects ◽  
Growth Temperature ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Layer Growth ◽  
Vacancy Clusters ◽  
Temperature And Growth

ABSTRACTSilicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing is the concentration of grown-in point defects. The incorporation of vacancy clusters and vacancy point defects in 200nm SiGe/Si layers grown by molecular beam epitaxy over different buffer layers has been observed using beam-based positron annihilation spectroscopy. Variables included the type of buffer layer, the growth temperature and growth rate for the buffer, and the growth temperature and growth rate for the top layer. Different growth conditions resulted in different relaxation amounts in the top layer, but in all samples the dislocation density was below 106 cm−2. Preliminary results indicate a correlation between the size, type and concentration of vacancy defects and the buffer layer growth temperature. At high buffer layer growth temperature of 500°C the vacancy point defect concentration is below the PAS detectable limit of approximately 1015 cm−3. As the buffer layer growth is decreased to a minimum value of 300°C, large vacancy clusters are observed in the buffered layer and vacancy point defects are observed in the SiGe film. These results are relevant to the role played by point defects grown-in at temperatures below ∼350°C in modeling dopant diffusion during processing.

The fabrication of a novel composite GaAs/SiO2 nucleation layer on silicon for heteroepitaxial overgrowth by molecular beam epitaxy

1991 ◽  
Vol 9 (1-3) ◽  
pp. 137-141 ◽  
Author(s):  
J. de Boeck ◽  
J. Alay ◽  
J. Vanhellemont ◽  
B. Brijs ◽  
W. Vandervorst ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nucleation Layer
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