Analytical Model of Noise Spectrum in Schottky-Barrier Diodes

2005 ◽  
Author(s):  
P. Shiktorov
Keyword(s):  
Schottky Barrier ◽  
Analytical Model ◽  
Noise Spectrum ◽  
Schottky Barrier Diodes

ANALYTICAL MODEL OF HIGH-FREQUENCY NOISE OF SCHOTTKY-BARRIER FREQUENCY MULTIPLIERS

2011 ◽  
Vol 10 (01) ◽  
pp. 121-131 ◽  
Author(s):  
F. Z. MAHI ◽  
A. R. HELMAOUI ◽  
L. VARANI ◽  
C. PALERMO ◽  
P. SHIKTOROV ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Analytical Model ◽  
High Frequency ◽  
Voltage Drop ◽  
Noise Spectrum ◽  
Resonant Circuit ◽  
Frequency Noise ◽  
Frequency Multipliers ◽  
Large Signal ◽  
High Frequency Noise

An analytical model of the high-frequency noise of frequency multipliers based on Schottky-barrier diodes (SBD) operating in series with a parallel resonant circuit under large-signal conditions is developed. Such a model, on one hand, takes into account the main intrinsic features of the SBD noise related to shot-noise, returning carriers, plasma resonance at n+n homojunctions, and, on the other hand, it incorporates the SBD noise spectrum modifications induced by the output resonant circuit. It is shown that the SBD embedding into an external circuit can produce the appearance of an extra noise due to up-down conversion of the fluctuations of the voltage drop between the SBD terminals originated by a periodic modulation of the varactor capacitance by the pumping signal.

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

2019 ◽  
Vol 780 ◽  
pp. 476-481 ◽  
Author(s):  
Hong Gu ◽  
Cong Hu ◽  
Jiale Wang ◽  
Youming Lu ◽  
Jin-Ping Ao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Free Standing

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 118 (17) ◽  
pp. 172106
Author(s):  
Sayleap Sdoeung ◽  
Kohei Sasaki ◽  
Satoshi Masuya ◽  
Katsumi Kawasaki ◽  
Jun Hirabayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Schottky Barrier Diodes
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