Analytical model of high-frequency noise spectrum in Schottky-barrier diodes

2005 ◽  
Vol 26 (1) ◽  
pp. 2-4 ◽  
2011 ◽  
Vol 10 (01) ◽  
pp. 121-131 ◽  
Author(s):  
F. Z. MAHI ◽  
A. R. HELMAOUI ◽  
L. VARANI ◽  
C. PALERMO ◽  
P. SHIKTOROV ◽  
...  

An analytical model of the high-frequency noise of frequency multipliers based on Schottky-barrier diodes (SBD) operating in series with a parallel resonant circuit under large-signal conditions is developed. Such a model, on one hand, takes into account the main intrinsic features of the SBD noise related to shot-noise, returning carriers, plasma resonance at n+n homojunctions, and, on the other hand, it incorporates the SBD noise spectrum modifications induced by the output resonant circuit. It is shown that the SBD embedding into an external circuit can produce the appearance of an extra noise due to up-down conversion of the fluctuations of the voltage drop between the SBD terminals originated by a periodic modulation of the varactor capacitance by the pumping signal.


2012 ◽  
Vol 11 (03) ◽  
pp. 1241002 ◽  
Author(s):  
A. BENALI ◽  
F. L. TRAVERSA ◽  
G. ALBAREDA ◽  
A. ALARCÓN ◽  
M. AGHOUTANE ◽  
...  

By means of the Ramo–Shockley–Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased.


2019 ◽  
Vol 67 (4) ◽  
pp. 315-329
Author(s):  
Rongjiang Tang ◽  
Zhe Tong ◽  
Weiguang Zheng ◽  
Shenfang Li ◽  
Li Huang

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