scholarly journals Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor

2005 ◽  
Vol 86 (25) ◽  
pp. 252108 ◽  
Author(s):  
E. A. Henriksen ◽  
S. Syed ◽  
Y. Ahmadian ◽  
M. J. Manfra ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Field Effect ◽  
Acoustic Phonon ◽  
Field Effect Transistor ◽  
Phonon Scattering ◽  
High Mobility ◽  
Low Density ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

A modified wrinkle-free MoS2 film transfer method for large area high mobility field-effect transistor

2019 ◽  
Vol 31 (5) ◽  
pp. 055707 ◽  
Author(s):  
Xueyuan Liu ◽  
Kailiang Huang ◽  
Miao Zhao ◽  
Fan Li ◽  
Honggang Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Large Area ◽  
Mos2 Film ◽  
Effect Transistor ◽  
Film Transfer ◽  
Transfer Method

Analysis of plasma waves resonant detection for terahertz radiation in high mobility field effect transistor

Optik ◽  
2013 ◽  
Vol 124 (23) ◽  
pp. 6408-6410
Author(s):  
Wenbin Guo ◽  
Caixia Liu ◽  
Liang Shen ◽  
Shengping Ruan
Keyword(s):  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Plasma Waves ◽  
Effect Transistor

scholarly journals Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

High mobility field effect transistor of SnOx on glass using HfOx gate oxide

2016 ◽  
Vol 16 (3) ◽  
pp. 300-304 ◽  
Author(s):  
Chanjong Ju ◽  
Chulkwon Park ◽  
Hyeonseok Yang ◽  
Useong Kim ◽  
Young Mo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Gate Oxide ◽  
Effect Transistor

Engineering gate dielectric surface properties for enhanced polymer field-effect transistor performance

2015 ◽  
Vol 3 (47) ◽  
pp. 12267-12272 ◽  
Author(s):  
Yanlian Lei ◽  
Bo Wu ◽  
Wing-Kin Edward Chan ◽  
Furong Zhu ◽  
Beng S. Ong
Keyword(s):  
Surface Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Mobility ◽  
Dielectric Surface ◽  
Effect Transistor

A high-performance “hybrid” dual-silane SAM enables the attainment of both a high mobility and on/off ratio, together with other desirable FET properties.

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