High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated

1995 ◽  
Vol 67 (9) ◽  
pp. 1262-1264 ◽  
Author(s):  
B. E. Kane ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Effect Transistor

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

A modified wrinkle-free MoS2 film transfer method for large area high mobility field-effect transistor

2019 ◽  
Vol 31 (5) ◽  
pp. 055707 ◽  
Author(s):  
Xueyuan Liu ◽  
Kailiang Huang ◽  
Miao Zhao ◽  
Fan Li ◽  
Honggang Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Large Area ◽  
Mos2 Film ◽  
Effect Transistor ◽  
Film Transfer ◽  
Transfer Method

Analysis of plasma waves resonant detection for terahertz radiation in high mobility field effect transistor

Optik ◽  
2013 ◽  
Vol 124 (23) ◽  
pp. 6408-6410
Author(s):  
Wenbin Guo ◽  
Caixia Liu ◽  
Liang Shen ◽  
Shengping Ruan
Keyword(s):  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Plasma Waves ◽  
Effect Transistor

scholarly journals Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

High mobility field effect transistor of SnOx on glass using HfOx gate oxide

2016 ◽  
Vol 16 (3) ◽  
pp. 300-304 ◽  
Author(s):  
Chanjong Ju ◽  
Chulkwon Park ◽  
Hyeonseok Yang ◽  
Useong Kim ◽  
Young Mo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Gate Oxide ◽  
Effect Transistor

scholarly journals Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor

2005 ◽  
Vol 86 (25) ◽  
pp. 252108 ◽  
Author(s):  
E. A. Henriksen ◽  
S. Syed ◽  
Y. Ahmadian ◽  
M. J. Manfra ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Field Effect ◽  
Acoustic Phonon ◽  
Field Effect Transistor ◽  
Phonon Scattering ◽  
High Mobility ◽  
Low Density ◽  
Effect Transistor

Engineering gate dielectric surface properties for enhanced polymer field-effect transistor performance

2015 ◽  
Vol 3 (47) ◽  
pp. 12267-12272 ◽  
Author(s):  
Yanlian Lei ◽  
Bo Wu ◽  
Wing-Kin Edward Chan ◽  
Furong Zhu ◽  
Beng S. Ong
Keyword(s):  
Surface Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Mobility ◽  
Dielectric Surface ◽  
Effect Transistor

A high-performance “hybrid” dual-silane SAM enables the attainment of both a high mobility and on/off ratio, together with other desirable FET properties.

scholarly journals All-oxide-based high-mobility planar PN junctions and tunnelling field effect transistor

2021 ◽  
Author(s):  
Le Duc Anh ◽  
Theodorus Wijaya ◽  
Shingo Kaneta ◽  
Munetoshi Seki ◽  
Hitoshi Tabata ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Substrate Surface ◽  
High Mobility ◽  
Oxide Materials ◽  
Simple Method ◽  
Wide Range ◽  
Effect Transistor ◽  
Pn Junctions

Abstract Electronics based on perovskite oxides, a class of materials with unparalleled wealth of physical functionalities, possesses high potential to go beyond the present semiconductor-based technologies. Towards universal and scalable oxide-based electronics, an important milestone is to realise both N- and P-type conduction regions – the two fundamental blocks of most of electronic devices – on the same oxide substrate surface. However, in contrast to the case of conventional semiconductors, the formation of planar PN junctions is highly challenging in oxide materials owing to difficulties in carrier doping. Here, we show that high-mobility PN junctions can be formed on a surface of SrTiO3 (STO), one of the most versatile oxide materials, in a robust and low-cost manner by simply depositing Angstrom-thin metal layers on top of an STO substrate near room temperature. Furthermore, by forming planar N-P-N junctions, we successfully demonstrate a new type of oxide-based tunnelling field effect transistor (TFET), which enables an extremely sharp switching with a subthreshold swing value S ~ 38 mV/dec and a large current ON/OFF ratio of 108. This high-performance FET operation is obtained by a new mechanism where a gate voltage strongly modulates the tunnelling probability through the depletion layers at the PN interfaces, utilising the unique strong nonlinear electric-field dependence of the permittivity of STO. Our simple method for selectively forming P and N-type regions monolithically on STO is potentially applicable to a wide range of oxide-based electronic systems, from single devices to integrated circuits, and even to flexible electronics.

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