Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

2005 ◽  
Vol 86 (20) ◽  
pp. 202114 ◽  
Author(s):  
K. C. Hall ◽  
K. Gündoğdu ◽  
J. L. Hicks ◽  
A. N. Kocbay ◽  
M. E. Flatté ◽  
...  
2020 ◽  
Vol 7 (13) ◽  
pp. 1903400
Author(s):  
Xingchen Liu ◽  
Ning Tang ◽  
Shixiong Zhang ◽  
Xiaoyue Zhang ◽  
Hongming Guan ◽  
...  

2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.


1996 ◽  
Vol 68 (6) ◽  
pp. 797-799 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Yuji Nishikawa ◽  
Osamu Wada

2004 ◽  
Vol 69 (3) ◽  
Author(s):  
I. Ya. Gerlovin ◽  
Yu. K. Dolgikh ◽  
S. A. Eliseev ◽  
V. V. Ovsyankin ◽  
Yu. P. Efimov ◽  
...  

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