scholarly journals Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature

2020 ◽  
Vol 7 (13) ◽  
pp. 1903400
Author(s):  
Xingchen Liu ◽  
Ning Tang ◽  
Shixiong Zhang ◽  
Xiaoyue Zhang ◽  
Hongming Guan ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Spin Dynamics ◽  
Polarization Electric Field

Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

2005 ◽  
Vol 86 (20) ◽  
pp. 202114 ◽  
Author(s):  
K. C. Hall ◽  
K. Gündoğdu ◽  
J. L. Hicks ◽  
A. N. Kocbay ◽  
M. E. Flatté ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Spin Dynamics

Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Low Pressure ◽  
Lower Efficiency ◽  
Strong Light ◽  
The Common ◽  
Piezo Electric

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

Room‐temperature electron spin dynamics in GaAs/AlGaAs quantum wells

1996 ◽  
Vol 68 (6) ◽  
pp. 797-799 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Yuji Nishikawa ◽  
Osamu Wada
Keyword(s):  
Quantum Wells ◽  
Electron Spin ◽  
Room Temperature ◽  
Spin Dynamics ◽  
Temperature Electron ◽  
Electron Spin Dynamics

scholarly journals Spin dynamics of carriers in GaAs quantum wells in an external electric field

2004 ◽  
Vol 69 (3) ◽  
Author(s):  
I. Ya. Gerlovin ◽  
Yu. K. Dolgikh ◽  
S. A. Eliseev ◽  
V. V. Ovsyankin ◽  
Yu. P. Efimov ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
External Electric Field ◽  
Spin Dynamics

Determination of Transition Mechanism and Polarity of a c-Plane ZnO Bulk by Using Contactless Electroreflectance Spectrum

2013 ◽  
Vol 538 ◽  
pp. 189-192 ◽  
Author(s):  
An Hai Tseng ◽  
Yei Fai Chiang ◽  
Dong Po Wang
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Mercury Lamp ◽  
Transition Energies ◽  
Line Shapes ◽  
Transition Mechanism ◽  
Excitonic Transition ◽  
Polarization Electric Field ◽  
Type Of Transition

Contactless electroreflectance（CER）spectra of Zn and O-polarity faces of a c-plane ZnO bulk were measured at room temperature. Besides a depletion electric field existing in the sample, it is known that there is a polarization electric field due to nonzero spontaneous polarization. In this work, a mercury lamp was focused on the ZnO sample in the CER measurements to provide a photo-biased voltage to reduce strength of electric field of the sample. It was found that the spectrum with Hg lamp being on is more blue-shifted and its amplitude is smaller than that without Hg lamp. Thus the type of transition was attributed to excitonic transition. The shift of the excitonic transition-energies of the Zn- and O-faces were obtained by fitting experimental CER spectra by using Lorenzian line-shapes. In addition, the polarity of faces can be determined by the amount of shift with Hg lamp being on.

scholarly journals Enhanced electrocaloric effect at room temperature in Mn2+ doped lead-free (BaSr)TiO3 ceramics via a direct measurement

2021 ◽  
Author(s):  
Xiang Niu ◽  
Xiaodong Jian ◽  
Xianyi Chen ◽  
Haoxuan Li ◽  
Wei Liang ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Temperature Drop ◽  
Impedance Analysis ◽  
Manganese Ions ◽  
Electrocaloric Effect ◽  
Conventional Solid State Reaction ◽  
Low Dielectric ◽  
Polarization Electric Field

Abstract(Ba1−xSrx)(MnyTi1−y)O3 (BSMT) ceramics with x = 35, 40 mol% and y = 0, 0.1, 0.2, 0.3, 0.4, 0.5 mol% were prepared using a conventional solid-state reaction approach. The dielectric and ferroelectric properties were characterized using impedance analysis and polarization-electric field (P–E) hysteresis loop measurements, respectively. The adiabatic temperature drop was directly measured using a thermocouple when the applied electric field was removed. The results indicate that high permittivity and low dielectric losses were obtained by doping 0.1–0.4 mol% of manganese ions in (BaSr)TiO3 (BST) specimens. A maximum electrocaloric effect (ECE) of 2.75 K in temperature change with electrocaloric strength of 0.55 K·(MV/m)−1 was directly obtained at ∼21 °C and 50 kV/cm in Ba0.6Sr0.4Mn0.001Ti0.999O3 sample, offering a promising ECE material for practical refrigeration devices working at room temperature.

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