Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon

2005 ◽  
Vol 86 (19) ◽  
pp. 192901 ◽  
Author(s):  
Feliciano Giustino ◽  
Angelo Bongiorno ◽  
Alfredo Pasquarello
Keyword(s):  
Oxide Thickness ◽  
Gate Insulator ◽  
Equivalent Oxide Thickness ◽  
Thin Oxide

Electricaland Structural Characteristics Of Ultra-Thin TiO2/Ti-Si-O Stacked Gate Insulator Formed by Rf Sputtering Technique

2001 ◽  
Vol 670 ◽  
Author(s):  
M. Koyama ◽  
A. Kaneko ◽  
M. Koike ◽  
I. Fujiwara ◽  
M. Yabuki ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
High Spatial Resolution ◽  
Structural Characteristics ◽  
Rf Sputtering ◽  
Amorphous Layer ◽  
Oxide Thickness ◽  
Oxygen Flow Rate ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness

ABSTRACTIn this paper, we have reported an attempt to decrease equivalent oxide thickness (EOT) of TiO2gate insulator by thinning the amorphous layer formed at the TiO2/Si interface. We have decreased the thickness of the TiO2/Si interfacial layer to as little as 1.6 nm by suppressing the oxygen flow rate during the TiO2 sputtering. It was confirmed that the dielectric constant of the interfacial layer revealed higher value than that of SiO2, depending on the sputtering condition. Titanium in the interfacial layer, which was responsible for the polarization enhancement, was explicitly identified by high spatial resolution TEM-EELS. As a result, EOT of 1.3 nm was realized by TiO2/Ti-Si-O stacked gate insulator without any degradation in the electrical characteristics.

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

2011 ◽  
Vol 55 (1) ◽  
pp. 64-67 ◽  
Author(s):  
W.B. Chen ◽  
C.H. Cheng ◽  
C.W. Lin ◽  
P.C. Chen ◽  
Albert Chin
Keyword(s):  
High Field ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Metal Gate ◽  
Field Mobility

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

2009 ◽  
Vol 95 (1) ◽  
pp. 012103 ◽  
Author(s):  
Chuan-Hsi Liu ◽  
Hung-Wen Chen ◽  
Shung-Yuan Chen ◽  
Heng-Sheng Huang ◽  
Li-Wei Cheng
Keyword(s):  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Current Conduction
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