scholarly journals Role of phonon scattering in carbon nanotube field-effect transistors

2005 ◽  
Vol 86 (19) ◽  
pp. 193103 ◽  
Author(s):  
Jing Guo ◽  
Mark Lundstrom
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Phonon Scattering ◽  
Field Effect Transistors

scholarly journals The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

Nano Letters ◽  
2005 ◽  
Vol 5 (7) ◽  
pp. 1497-1502 ◽  
Author(s):  
Zhihong Chen ◽  
Joerg Appenzeller ◽  
Joachim Knoch ◽  
Yu-ming Lin ◽  
Phaedon Avouris
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors

Influence of Chemical Dopant Technique to Reduce Schottky Barriers of Pd-Contacted CNTFETs

2006 ◽  
Vol 963 ◽  
Author(s):  
Damien Casterman ◽  
Merlyne Maria De Souza
Keyword(s):  
Carbon Nanotube ◽  
Ab Initio ◽  
Schottky Barrier ◽  
Chlorine Atom ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Barriers ◽  
And Shifts ◽  
P Type

ABSTRACTThe role of the p-type chemical dopant, SbCl6, on Palladium (Pd)-contacted carbon nanotube field effect transistors (CNTFETs) is investigated using ab initio calculations. The interaction of SbCl6 with Pd leads to the chemisorption of one chlorine atom (Cl) which separates off from the rest of the molecule leaving behind a rehybridized SbCl5 molecule. This interaction increases the local workfunction by 0.08 eV. The interaction of the molecule with the carbon nanotube (CNT) itself results in the physisorption of SbCl6 onto CNT. The SbCl6 is found to degenerately dope CNT p-type and shifts the local potential by 0.29 eV. These barriers are useful for modelling of transport of Schottky barrier CNTFETs.

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