Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect Transistors

2016 ◽  
Vol 8 (5) ◽  
pp. 1028-1035 ◽  
Author(s):  
Huei Chaeng Chin ◽  
Cheng Siong Lim ◽  
Michael Loong Peng Tan
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Phonon Scattering ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Current Model ◽  
Drain Current ◽  
Scattering Effects

scholarly journals A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

2006 ◽  
Vol 18 (2) ◽  
pp. 025201 ◽  
Author(s):  
D Jiménez ◽  
X Cartoixà ◽  
E Miranda ◽  
J Suñé ◽  
F A Chaves ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current

scholarly journals A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

2007 ◽  
Vol 18 (41) ◽  
pp. 419001 ◽  
Author(s):  
D Jiménez ◽  
X Cartoixà ◽  
E Miranda ◽  
J Suñé ◽  
F A Chaves ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current

An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

2019 ◽  
Vol 58 (9) ◽  
pp. 095001
Author(s):  
Jiarui Bao ◽  
Shuyan Hu ◽  
Guangxi Hu ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Graphene Nanoribbon

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Explicit drain current model of junctionless double-gate field-effect transistors

2013 ◽  
Vol 89 ◽  
pp. 134-138 ◽  
Author(s):  
Ashkhen Yesayan ◽  
Fabien Prégaldiny ◽  
Jean-Michel Sallese
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Double Gate
Sign in / Sign up

Export Citation Format

Share Document