High-electric-field current–voltage characteristics and low-frequency oscillations in a low-dislocation-density semi-insulating GaAs

2005 ◽  
Vol 97 (11) ◽  
pp. 116103 ◽  
Author(s):  
M. Kiyama ◽  
M. Tatsumi ◽  
M. Yamada
Keyword(s):  
Dislocation Density ◽  
Electric Field ◽  
Low Frequency ◽  
High Electric Field ◽  
Low Frequency Oscillations ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Current Voltage Characteristics

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Current-voltage characteristics in a superconducting Bi-2223 tape in the range of very low electric field

2001 ◽  
Vol 11 (1) ◽  
pp. 3935-3938
Author(s):  
E.S. Otabe ◽  
T. Kodama ◽  
M. Fukuda ◽  
T. Matsushita ◽  
K. Itoh
Keyword(s):  
Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics

EFFECT OF LIGHT IRRADIATION ON ELECTRIC-FIELD-INDUCED RESISTANCE SWITCHING PHENOMENON IN PLANAR VO2/c-Al2O3 STRUCTURE

2009 ◽  
Vol 08 (01n02) ◽  
pp. 147-150 ◽  
Author(s):  
NURUL EZREENA MOHAMAD ◽  
KUNIO OKIMURA ◽  
JOE SAKAI
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Applied Voltage ◽  
Resistance Switching ◽  
Light Irradiation ◽  
Switching Phenomenon ◽  
Current Voltage ◽  
Jump Phenomena ◽  
Current Voltage Characteristics ◽  
Effect Of Light

A simple device of VO 2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current–voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.

Un-cooled Micro-bolometer with Sandwiched Thermo-sensing Layer Based on Ge Films Deposited by Plasma

2006 ◽  
Vol 910 ◽  
Author(s):  
Andrey Kosarev ◽  
Mario Moreno ◽  
Alfonso Torres ◽  
Roberto Ambrosio
Keyword(s):  
Response Time ◽  
Low Frequency ◽  
Thermal Response ◽  
Thermal Coefficient ◽  
Temperature Dependence Of Conductivity ◽  
Current Voltage ◽  
Thermal Response Time ◽  
Current Voltage Characteristics ◽  
Thermal Coefficient Of Resistance ◽  
Further Development

AbstractWe have fabricated and studied an un-cooled micro-bolometer with thermo-sensing layer sandwiched between two electrodes. The micro-bolometer has “bridge” configuration to provide sufficient thermo isolation of the thermo-sensing layer and is made on the surface of silicon wafer by means of surface micro-machining technique. The support layer of SiN and thermo-sensing layer of a-Ge:H,F have been deposited by low frequency PE CVD. The active area of the thermo-sensing layer is Ab=70x66 μm2. Temperature dependence of conductivity σ(T), current-voltage characteristics I(U), spectral noise density and thermal response time have been measured to characterize operation and to determine main performance characteristics. Activation energy of the thermo-sensing layer was Ea=0.34 eV providing thermal coefficient of resistance α=0.043 K-1. Pixel resistance was in the range Rb=(1÷30)x105 Ohm. Current and voltage responsivities were in the range RI=0.3÷14 AW-1 and RU=(1÷2)x105 VW-1, respectively. The value of detectivity was in the range of D*=(1÷40)x108 cmHz1/2W-1 and response time was τ=100 μs. The characteristics obtained in this micro-bolometer with sandwiched thermo-sensing layer make it promising for further development.

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

scholarly journals Parallel electric field structures associated with the low-frequency oscillations in the auroral plasma

2006 ◽  
Vol 58 (9) ◽  
pp. 1227-1232 ◽  
Author(s):  
R. V. Reddy ◽  
S. V. Singh ◽  
G. S. Lakhina ◽  
R. Bharuthram
Keyword(s):  
Electric Field ◽  
Low Frequency ◽  
Parallel Electric Field ◽  
Low Frequency Oscillations ◽  
Auroral Plasma
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