scholarly journals Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p‐n junction dopant profiling

2005 ◽  
Vol 86 (18) ◽  
pp. 182101 ◽  
Author(s):  
J. Yang ◽  
J. J. Kopanski ◽  
A. Postula ◽  
M. Bialkowski
Keyword(s):  
Experimental Investigation ◽  
Interface States ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Photovoltaic Effects ◽  
Microscopy Measurement

Experimental investigation of interface states in photonic crystal heterostructures

2008 ◽  
Vol 78 (2) ◽  
Author(s):  
Jiyong Guo ◽  
Yong Sun ◽  
Yewen Zhang ◽  
Hongqiang Li ◽  
Haitao Jiang ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Photonic Crystal ◽  
Interface States ◽  
Photonic Crystal Heterostructures

Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

2008 ◽  
Vol 48 (8-9) ◽  
pp. 1339-1342 ◽  
Author(s):  
Roland Biberger ◽  
Guenther Benstetter ◽  
Thomas Schweinboeck ◽  
Peter Breitschopf ◽  
Holger Goebel
Keyword(s):  
Contact Mode ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Intermittent Contact

Guidelines for Two-Dimensional Dopant Profiling Using Scanning Capacitance Microscopy

2000 ◽  
Author(s):  
Axel Born ◽  
R. Wiesendanger
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Edge Effects ◽  
Two Dimensional ◽  
Stray Capacitance ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
3D Geometry ◽  
Cv Measurements ◽  
Preparation Techniques

Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions.

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