Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

2005 ◽  
Vol 97 (11) ◽  
pp. 114313 ◽  
Author(s):  
N. Dyakonova ◽  
F. Teppe ◽  
J. Łusakowski ◽  
W. Knap ◽  
M. Levinshtein ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Mobility ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Terahertz Emission ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085004 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
David Niepce ◽  
Arsalan Pourkabirian ◽  
Giuseppe Moschetti ◽  
Joel Schleeh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

2004 ◽  
Vol 84 (13) ◽  
pp. 2331-2333 ◽  
Author(s):  
W. Knap ◽  
J. Lusakowski ◽  
T. Parenty ◽  
S. Bollaert ◽  
A. Cappy ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Plasma Waves ◽  
High Electron ◽  
Terahertz Emission ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

2015 ◽  
Vol 1763 ◽  
Author(s):  
Espinosa Nayeli ◽  
Schwarz U. Stefan ◽  
Cimalla Volker ◽  
Ambacher Oliver
Keyword(s):  
Detection Limit ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Adsorption Model ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Target Dna

ABSTRACTThis work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10-15 to 10-6 mol/L were tested. The sensor has a detection limit of 10-12 mol/L and saturates after the addition of 10-8 mol/L target-DNA.

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