scholarly journals Giant negative magnetoresistance of spin polarons in magnetic semiconductors–chromium-doped Ti2O3 thin films

2005 ◽  
Vol 86 (8) ◽  
pp. 082509 ◽  
Author(s):  
Zhenjun Wang ◽  
Yuanjia Hong ◽  
Jinke Tang ◽  
Cosmin Radu ◽  
Yuxi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Negative Magnetoresistance ◽  
Spin Polarons

scholarly journals Modeling huge photoinduced spin polarons in intrinsic magnetic semiconductors

2021 ◽  
Vol 103 (3) ◽  
Author(s):  
S. C. P. van Kooten ◽  
X. Gratens ◽  
A. B. Henriques
Keyword(s):  
Magnetic Semiconductors ◽  
Spin Polarons

scholarly journals Synthesis and Characterization of Sodium Bis(2-ethylhexyl) Sulfonsuccinate (AOT) Capped Pure and Mn-Doped CdS Nanoparticles

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
D. Venkatesan ◽  
D. Deepan ◽  
J. Ramkumar ◽  
S. Moorthy Babu ◽  
R. Dhanasekaran
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Transition Metal Ions ◽  
Hexagonal Structure ◽  
Cds Nanoparticles ◽  
Sem Images ◽  
Semiconducting Properties ◽  
Mn Doped

CdS nanoparticles and thin films are well known for their excellent semiconducting properties. When transition metal ions are doped into the CdS, it exhibits magnetic properties in addition to semiconducting properties and they are termed as dilute magnetic semiconductors (DMSs). In this paper, we discuss the preparation of sodium bis(2-ethylhexyl) sulfonsuccinate (AOT) capped CdS nanoparticles and thin films doped with magnetic impurity Mn. Sodium bis(2-ethulexyl) sulfonsuccinate (AOT), capping agent promotes the uniform formation of nanoparticles. Optical characterizations are made using the UV-Vis spectrometer, PL, and FTIR. XRD shows the hexagonal structure of the CdS. SEM images and EDS measurements were made for the thin films. EPR shows the clear hyperfine lines corresponding to Mn2+ion in the CdS nanoparticles.

Negative magnetoresistance in iron doped TiN thin films prepared by reactive magnetron sputtering

2020 ◽  
Vol 514 ◽  
pp. 167235
Author(s):  
Monzer Maarouf ◽  
Muhammad Baseer Haider ◽  
Mohammed Fayyad Al-Kuhaili ◽  
Abdullah Aljaafari ◽  
Javed Yar Khan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Negative Magnetoresistance ◽  
Reactive Magnetron ◽  
Iron Doped ◽  
Tin Thin Films

Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

2011 ◽  
Vol 1329 ◽  
Author(s):  
Bahadir Kucukgok ◽  
Liqin Su ◽  
Elisa N. Hurwitz ◽  
Andrew Melton ◽  
Liu Zhiqiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Seebeck Effect ◽  
Ferromagnetic Behavior ◽  
Successful Development ◽  
Spintronic Devices ◽  
Spin Seebeck Effect

ABSTRACTGaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck effect in MOCVD grown Gd-doped GaN (Gd: GaN) are investigated.

scholarly journals Structure dependent negative magnetoresistance of amorphous carbon thin films

2017 ◽  
Vol 72 ◽  
pp. 108-113 ◽  
Author(s):  
Awais Siddique Saleemi ◽  
Rajan Singh ◽  
Zhaochu Luo ◽  
Xiaozhong Zhang
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Negative Magnetoresistance ◽  
Carbon Thin Films

SYNTHESIS AND MAGNETIC PROPERTIES OF Ni-DOPED ZnO THIN FILMS: EXPERIMENTAL AND AB INITIO STUDY

2016 ◽  
Vol 24 (06) ◽  
pp. 1750085 ◽  
Author(s):  
M. ROUCHDI ◽  
E. SALMANI ◽  
A. EL HAT ◽  
N. HASSANAIN ◽  
A. MZERD
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Wurtzite Structure ◽  
Ni Doping ◽  
Diluted Magnetic

Structural and magnetic properties of Zn[Formula: see text]NixO thin films and diluted magnetic semiconductors have been investigated. This sample has been synthesized using a spray pyrolysis technique with a stoechiometric mixture of zinc acetate (C4H6O4Zn[Formula: see text]2H2O) and Nickel acetate (C4H6O4Ni[Formula: see text] 2H2O) on a heated glass substrate at 450[Formula: see text]C. The films were characterized by X-ray diffraction (XRD), UV–Vis spectrophotometry and Hall Effect measurements. These films of ZnO crystallized in the hexagonal Wurtzite structure. The optical study showed that the band-gap energy was increased, from 3.3[Formula: see text]eV to 3.5[Formula: see text]eV, with increasing the Ni concentration. The film resistivity was affected by Ni-doping, and the best resistivity value 1.15[Formula: see text][Formula: see text][Formula: see text]10[Formula: see text] ([Formula: see text] cm) was obtained for the film doped with 2 at.% Ni. The electronic structure and optical properties of the Wurtzite structure Zn[Formula: see text]NixO were obtained by first-principles calculations using the Korringa–Kohn–Rostoker method combined with the coherent potential approximation (CPA), as well as CPA confirm our results.

Effect of Partial Oxygen Pressure on Structural, Electrical, and Magneto transport Properties of Cobalt Doped Indium Oxide Thin Films

2009 ◽  
Vol 1183 ◽  
Author(s):  
Abhijit Ghosh ◽  
N. Ukah ◽  
R K Gupta ◽  
P K Kahol ◽  
K Ghosh
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Indium Oxide ◽  
Oxygen Pressure ◽  
Magnetic Semiconductors ◽  
Growth Parameters ◽  
Dilute Magnetic Semiconductors ◽  
Partial Oxygen Pressure ◽  
Magneto Resistance ◽  
Partial Oxygen

AbstractDilute magnetic semiconductors are ferromagnetic semiconductors recently discovered in nitride and oxide semiconductors by incorporating a small percentage of magnetic atoms into the semiconductors host. Recently it is reported that the structural and electrical properties of pure indium oxide can be modified by growth parameters. In this paper we investigate magneto-transport properties of Co-doped In2O3 dilute magnetic semiconductors thin films grown on sapphire and quartz substrates using pulsed laser deposition technique. The effect of partial oxygen pressure on structural, electrical, optical, and magneto-transport properties was discussed in details. The crystallinity of the films largely depends on growth temperature. Magneto-transport properties such as temperature dependent resistivity and magneto-resistance were found to be very sensitive to the micro-structural properties such as crystalinity as well as oxygen defect. The electrical carrier density of the films depends on oxygen pressure and a change of two orders of magnitude is observed. Depending on growth parameters, both positive and negative magneto-resistance is observed. Optical band-gap seems to vary with the growth partial oxygen pressure.

Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method

2013 ◽  
Vol 76 (7) ◽  
pp. 751-755 ◽  
Author(s):  
Subramanian Balamurali ◽  
Rathinam Chandramohan ◽  
Marimuthu Karunakaran ◽  
Thayan Mahalingam ◽  
Padmanaban Parameswaran ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Reaction Method ◽  
Adsorption Reaction ◽  
Morphological Variations ◽  
Doped Zno ◽  
Mn Doped ◽  
Ionic Layer
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